Si7615BDNT-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d,e
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
-20
±8
-30
a
-30
a
-22
b,c
-17
b,c
-80
-30
a
-3.1
b,c
-20
20
39
25
3.7
b,c
2.4
b,c
-55 to 150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
b,f
Maximum Junction-to-Case (Drain)
t
10 s
Steady State
SYMBOL
R
thJA
R
thJC
TYPICAL
24
2.4
MAXIMUM
33
3.2
UNIT
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
S13-2623-Rev. A, 23-Dec-13
Document Number: 62927
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7615BDNT
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -13 A
V
GS
= -3.7 V, I
D
= -10 A
V
GS
= -2.5 V, I
D
= -10 A
V
GS
= -1.8 V, I
D
= -5 A
V
DS
= -10 V, I
D
= -13 A
MIN.
-20
-
-
-0.4
-
-
-
-20
-
-
-
-
-
-
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -10 V, V
GS
= -8 V, I
D
= -20 A
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -20 A
f = 1 MHz
V
DD
= -10 V, R
L
= 1
I
D
-10 A, V
GEN
= -4.5 V, R
g
= 1
-
-
-
-
-
-
0.8
-
-
-
-
-
V
DD
= -10 V, R
L
= 1
I
D
-10 A, V
GEN
= -8 V, R
g
= 1
-
-
-
T
C
= 25 °C
I
S
= -10 A, V
GS
= 0 V
-
-
-
-
I
F
= -10 A, dI/dt = 100 A/μs, T
J
= 25 °C
-
-
-
TYP.
-
-16
2.9
-
-
-
-
-
0.0044
0.0048
0.0065
0.0110
55
5700
620
585
98
57
7.4
13.1
3.8
40
30
100
30
15
10
110
25
-
-
-0.8
19
10
9
10
MAX.
-
-
-
-0.9
± 100
-1
-10
-
0.0054
0.0060
0.0083
0.0140
-
-
-
-
180
86
-
-
7.6
80
60
200
60
30
20
220
50
-30
-80
-1.2
40
20
-
-
ns
nC
pF
S
UNIT
V
mV/°C
V
nA
μA
A
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
R
DS(on)
Forward Transconductance
Dynamic
b
a
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2623-Rev. A, 23-Dec-13
Document Number: 62927
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7615BDNT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
V
GS
= 5 V thru 2.5 V
V
GS
= 2 V
16
20
Vishay Siliconix
60
I
D
- Drain Current (A)
I
D
- Drain Current (A)
12
T
C
= 25
°C
40
8
T
C
= 125
°C
4
T
C
= - 55
°C
20
V
GS
= 1.5 V
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.3
0.6
0.9
1.2
1.5
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
0.0400
8000
R
DS(on)
- On-Resistance (Ω)
0.0300
V
GS
= 1.8 V
C - Capacitance (pF)
C
iss
6000
0.0200
4000
0.0100
V
GS
= 3.7 V
V
GS
= 2.5 V
V
GS
= 4.5 V
2000
C
oss,
C
rss
0.0000
0
20
40
I
D
- Drain Current (A)
60
80
0
0
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
R
DS(on)
- On-Resistance (Normalized)
1.6
I
D
= 13 A
1.4
V
GS
= 4.5 V, 3.7 V
V
GS
= 2.5 V
V
GS
-
Gate-to-Source
Voltage (V)
I
D
= 20 A
6
V
DS
= 10 V
1.2
V
GS
= 1.8 V
1.0
4
V
DS
= 5 V
V
DS
= 16 V
2
0.8
0
0
25
50
75
100
Q
g
- Total
Gate
Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S13-2623-Rev. A, 23-Dec-13
On-Resistance vs. Junction Temperature
Document Number: 62927
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7615BDNT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.030
Vishay Siliconix
0.025
R
DS(on)
- On-Resistance (Ω)
I
D
= 13 A
I
S
-
Source
Current (A)
T
J
= 150
°C
10
0.020
0.015
T
J
= 25
°C
1
0.010
T
J
= 125
°C
T
J
= 25
°C
0.005
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.000
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
80
0.7
60
0.6
Power (W)
V
GS(th)
(V)
0.5
I
D
= 250 μA
0.4
40
20
0.3
0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
Limited by R
DS(on)
*
100
I
D
- Drain Current (A)
Limited by I
DM
10
100 μs
1 ms
1
10 ms
100 ms
1
s
10
s
DC
BVDSS Limited
0.1
T
A
= 25
°C
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S13-2623-Rev. A, 23-Dec-13
Document Number: 62927
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7615BDNT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
40
Vishay Siliconix
60
I
D
- Drain Current (A)
30
Power (W)
40
Package Limited
20
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Case
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-2623-Rev. A, 23-Dec-13
Document Number: 62927
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Embedded System
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