72211L35LB datasheet, PDF - EEWORLD Datasheet

72211L35LB: DescriptionFIFO, 512X9, 20ns, Synchronous, CMOS, CQCC32; Categorystorage storage; File Size1MB，19 Pages; ManufacturerIDT (Integrated Device Technology)

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72211L35LB Overview

FIFO, 512X9, 20ns, Synchronous, CMOS, CQCC32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
package instruction	QCCN, LCC32,.45X.55
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum access time	20 ns
Maximum clock frequency (fCLK)	28.6 MHz
JESD-30 code	R-XQCC-N32
JESD-609 code	e0
Memory IC Type	OTHER FIFO
memory width	9
Number of terminals	32
word count	512 words
character code	512
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512X9
Package body material	CERAMIC
encapsulated code	QCCN
Encapsulate equivalent code	LCC32,.45X.55
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30

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