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NXP Semiconductors
Product data sheet
PNP general purpose transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
handbook, halfpage
2PB709A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PNP transistor in an SC-59 plastic package.
NPN complement: 2PB601A.
MARKING
TYPE NUMBER
2PB709AQ
2PB709AR
2PB709AS
MARKING CODE
BQ
BR
BS
3
3
1
2
MAM322
1
Top view
2
Fig.1 Simplified outline (SC-59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−45
−45
−6
−100
−200
−100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 23
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
2PB709AQ
2PB709AR
2PB709AS
V
CEsat
C
c
f
T
collector-emitter saturation
voltage
collector capacitance
transition frequency
2PB709AQ
2PB709AR
2PB709AS
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
I
C
=
−100
mA; I
B
=
−10
mA; note 1
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
=
−1
mA; V
CE
=
−10
V; f = 100 MHz
60
70
80
−
−
−
CONDITIONS
I
E
= 0; V
CB
=
−45
V
I
E
= 0; V
CB
=
−45
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−2
mA; V
CE
=
−10
V
160
210
290
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
2PB709A
UNIT
K/W
MAX.
−10
−5
−10
260
340
460
−500
5
UNIT
nA
μA
nA
mV
pF
MHz
MHz
MHz
1999 Apr 23
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
2PB709A
SOT346
E
D
B
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.3
1.0
A
1
0.1
0.013
b
p
0.50
0.35
c
0.26
0.10
D
3.1
2.7
E
1.7
1.3
e
1.9
e
1
0.95
H
E
3.0
2.5
L
p
0.6
0.2
Q
0.33
0.23
v
0.2
w
0.2
OUTLINE
VERSION
SOT346
REFERENCES
IEC
JEDEC
TO-236
EIAJ
SC-59
EUROPEAN
PROJECTION
ISSUE DATE
98-07-17
1999 Apr 23
4
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