Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
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use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
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NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
Low current (max. 200 mA)
•
Low voltage (max. 15 V).
APPLICATIONS
•
High-speed switching, especially in portable equipment.
DESCRIPTION
handbook, halfpage
PMBT2369
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
MARKING
TYPE NUMBER
PMBT2369
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
PMBT2369
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
*1J
Top view
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
40
15
5
200
300
100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
2004 Jan 22
2
NXP Semiconductors
Product data sheet
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 125
°C
I
C
= 0; V
EB
= 4 V
I
C
= 10 mA; V
CE
= 1 V
I
C
= 10 mA; V
CE
= 1 V; T
amb
=
−55 °C
I
C
= 100 mA; V
CE
= 2 V
V
CEsat
V
BEsat
C
c
f
T
t
on
t
d
t
r
t
off
t
s
t
f
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
I
C
= 10 mA; I
B
= 1 mA
I
C
= 10 mA; I
B
= 1 mA
I
E
= I
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
I
Con
= 10 mA; I
Bon
= 3 mA;
I
Boff
=
−1.5
mA
−
−
−
40
20
20
−
700
−
500
−
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PMBT2369
VALUE
500
UNIT
K/W
MAX.
400
30
100
120
−
−
250
850
4
−
UNIT
nA
µA
nA
mV
mV
pF
MHz
Switching times (between 10% and 90% levels);
(see Fig.2)
turn-on time
delay time
rise time
turn-off time
storage time
fall time
10
4
6
20
10
10
ns
ns
ns
ns
ns
ns
2004 Jan 22
3
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