TK610xx
ADVANCED
INFORMATION
FEATURES
s
Very Low Quiescent Current ( 1
µ
A)
s
No External Components
s
Built In Hysteresis (5% typ.)
s
±
2 % Voltage Detection Accuracy
s
Miniature Package (SOT23-5)
VOLTAGE DETECTOR
APPLICATIONS
s
Battery Powered Systems
s
Wireless Telephones
s
Pagers
s
Personal Communications Equipment
s
Personal Digital Assistants
DESCRIPTION
The TK610xx family of voltage detectors is designed to
provide accurate monitoring of the battery voltage. These
low powered CMOS devices require no external
components and are available in 0.1 V steps from 2.0 V to
5.0 V.
When the input voltage reaches the detection voltage, the
output goes low. This detection voltage has a
±2
%
accuracy and is set at the factory. When the input voltage
goes high, the output will stay low until the voltage reaches
the detection voltage plus hysteresis (+3 to +7 %).
The TK610xx is available in a miniature SOT23-5 surface
mount package.
01S
TK610xx
OUT
VDD
GND
NC
NC
BLOCK DIAGRAM
VDD
ORDERING INFORMATION
TK610
Voltage Code
S
OUT
Tape/Reel Code
Vref
VOLTAGE CODE *
23 = 2.3 V
25 = 2.5 V
27 = 2.7 V
30 = 3.0 V
33 = 3.3 V
36 = 3.6 V
40 = 4.0 V
41 = 4.1 V
42 = 4.2 V
45 = 4.5 V
TAPE/REEL CODE
TL: Tape Left
GND
* Consult factory for availability of other voltages
October 1999 TOKO, Inc.
Page 1
TK610xx
ABSOLUTE MAXIMUM RATINGS
All Pins Except GND ................................................ 11 V
Power Dissipation (Note 4) ................................ 400 mW
Storage Temperature Range ................... -40 to +125
°C
Operating Temperature Range ...................-30 to +80
°C
Junction Temperature ........................................... 150
°C
TK610xx ELECTRICAL CHARACTERISTICS
T
A
= 25
°C,
unless otherwise specified.
SYMBOL
V
ERR
HYS
V
DDH
V
DDL
∆V
DET
V
DET
*
∆T
t
DR
I
SSL
I
SSM
I
SSH
I
ON1
I
ON2
I
OP1
I
OP1
Note 1:
Note 2:
Note 3:
Note 4:
PARAMETER
Voltage Accuracy
Hysteresis
Maximum Operating Voltage
Lowest Operating Voltage
Detection Voltage
Temperature Coefficient
Rise Propagation Delay Time
Supply Current (L)
Supply Current (M)
Supply Current (H)
Output Current (N1) (Note 5)
Output Current (N2) (Note 5)
Output Current (P1) (Note 6)
Output Current (P1) (Note 6)
TEST CONDITIONS
Note 1
Note 2
MIN
-2
3
9
TYP
MAX
+2
UNITS
%
%
V
5
7
0.8
-30 ° C
≤
top
≤
80 ° C
Note 3
V
DD
= 1.0 V
V
DD
= 5.0 V,
2.0 V
≤
Setting Voltage
≤
5.0 V
V
DD
= 7.0 V,
4.2 V
≤
Setting Voltage
≤
5.0 V
V
DS
= 0.05 V, V
DD
= 0.8 V
V
DS
= 0.5 V, V
DD
= 1.5 V
V
DS
= 2.1 V, V
DD
= 4.5 V,
2.0 V
≤
Setting Voltage
≤
4.1 V
V
DS
= 2.1 V, V
DD
= 7.0 V,
4.2 V
≤
Setting Voltage
≤
5.0 V
0.01
2.0
2.0
6.0
1.0
1.5
0.05
4.0
4.0
8.0
±100
100
1.0
2.0
3.0
V
ppm/° C
µsec
µA
µA
µA
mA
mA
mA
mA
V
ERR
= 100 * (V
DET
- Setting Voltage) / Setting Voltage expressed in %
HYS = 100 * (V
HYS
- V
DET
) / V
DET
expressed in %
The applied voltage is a pulse of V
LOW
= 0.8 V, V
HIGH
= V
DET
+ 2 V
Power dissipation is 400 mW when mounted as recommended. Derate at 3.2 mW/°C for operation above 25
°C.
Power dissipation is 200 mW in Free Air. Derate at 1.6 mW/°C for operation above 25
°C.
Note 5: Output sink current.
Note 6: Output source current.
Page 2
October 1999 TOKO, Inc.
TK610xx
TEST CIRCUIT
OUT
VDD
GND
OUT
VDD
GND
VDD
VDD
FIGURE 1: TEST CIRCUIT FOR V
DET
, V
HYS
, V
DDH
,
V
DDL
, t
DR
FIGURE 3: TEST CIRCUIT FOR I
SS
OUT
O
V
V
DD
GND
G
OUT
O
V
V
DD
GND
G
VDS
VDS
VDD
VDD
FIGURE 2: TEST CIRCUIT FOR I
OP
FIGURE 4: TEST CIRCUIT FOR I
ON
October 1999 TOKO, Inc.
Page 3
TK610xx
TYPICAL PERFORMANCE CHARACTERISTICS
VS.
SUPPLY CURRENT
OPERATING VOLTAGE
8.0
V
= 4.2 V
DET
OUTPUT VOLTAGE
VS.
MAXIMUM
OPERATING VOLTAGE
7.0
6.0
VOUT (V)
VDET = 4.2 V
2.0
1.5
IDD (µA)
5.0
4.0
3.0
2.0
1.0
1.0
0.5
0.0
0.0
1.0
2.0 3.0 4.0
VDD (V)
5.0 6.0
7.0
0.0
0.0
1.0
2.0 3.0 4.0
VDD (V)
5.0 6.0
7.0
OUTPUT SINK CURRRENT
VS.
OUTPUT VOLTAGE
20.0
V
DD
= 2.5 V
OUTPUT SOURCE CURRRENT
VS.
OPERATING VOLTAGE
12.0
10.0
V
V
DS
DS
DS
= 2.5 V
= 2.0 V
= 1.5 V
15.0
IOUT N (mA)
V
DD
= 2.0 V
IOUT P (mA)
8.0
6.0
4.0
V
10.0
V
= 1.5 V
V
DS
= 1.0 V
5.0
DD
V
2.0
DS
= 0.5 V
0.0
0.0
V
= 1.0V
DD
1.0
VDS (V)
2.0
3.0
0.0
4.0
6.0
VDD (V)
8.0
10.0
4.4
4.35
VDET VHYS (V)
4.3
4.25
4.2
DETECTION VOLTAGE AND
HYSTERESIS
VS.
TEMPERATURE
1
PROPAGATION DELAY TIME
VS.
OUTPUT CAPACITANCE
V
HYS
td (ms)
tdf
0.1
tdr
V
DET
4.15
-50
0
VDD (V)
50
100
0.01
0.0001
0.001
0.01
0.1
COUT (µF)
Page 4
October 1999 TOKO, Inc.
TK610xx
DEFINITION AND EXPLANATION OF TECHNICAL TERMS
DETECTION VOLTAGE (V
DET
)
When V
DD
goes below the detection voltage, the output
goes low.
HYSTERESIS VOLTAGE (V
HYS
)
When V
DD
goes above the sum of the detection voltage
and the hysteresis voltage, the output goes high.
SUPPLY CURRENT (I
SSL
)
Supply current (V
DD
= 1 V)
SUPPLY CURRENT (I
SSM
)
Supply current (V
DD
= 5 V) 2.0 V
≤
setting voltage
≤
4.1 V
SUPPLY CURRENT (I
SSH
)
Supply current (V
DD
= 7 V) 4.2
≤
setting voltage
≤
5.0 V
OUTPUT CURRENT (I
ON1
)
Output sink current of output N channel FET
V
DD
= 0.8 V, V
DS
= 0.5 V
OUTPUT CURRENT (I
ON2
)
Output sink current of output N channel FET
V
DD
= 1.5 V, V
DS
= 0.5 V
OUTPUT CURRENT (I
OP1
)
Output source current of output P channel FET
V
DD
= 4.5 V, V
DS
= 2.1 V, 2.0 V
≤
setting voltage
≤
4.1 V
VOLTAGE ACCURACY (V
ERR
)
Error ratio of set voltage
V
ERR
= 100 * (V
DET
- Setting Voltage)/ Setting Voltage
expressed in %
HYSTERESIS (HYS)
Ratio of hysteresis voltage to detection voltage
HYS = 100 * (V
HYS
- V
DET
) / V
DET
expressed in %
MAXIMUM OPERATING VOLTAGE (V
DDH
)
The maximum operating voltage.
LOWEST OPERATING VOLTAGE (V
DDL
)
Voltage when V
DD
is reduced and output goes up from 0 V
to 100 mV.
DETECTION VOLTAGE TEMPERATURE COEFFICIENT
(∆ V
DET
/ V
DET
*
∆T)
Temperature coefficient of detection voltage.
∆
V
DET
V
DET
*
∆T
=
1000000 * (V
DET
(T) - V
DET
(25
°C))
V
DET
(25
°C)
* (T - 25
°C)
RISE PROPAGATION DELAY TIME (t
DR
)
The delay time for the output to reach (V
DET
+ 2.0 V) / 2
when V
DD
goes from V
LOW
= 0.8 V to V
HIGH
= V
DET
+ 2.0 V
October 1999 TOKO, Inc.
Page 5
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