GBPC35
I
F
, AVERAGE FORWARD CURRENT (A)
Mounted on a
220 x 220 x 50 mm
AL plate heatsink
30
GBPC25
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
40
100
10
GBPC15, 25
20
GBPC15
1.0
GBPC35
10
0.1
T
j
= 25°C
Resistive or
Inductive load
Pulse Width = 300µs
0
0.01
0
0.2
0.4 0.6
0.8
1.0
1.2
1.4
1.6 1.8
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
Fig. 1 Forward. Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
I
FSM
, PEAK FWD. SURGE CURRENT (A)
400
Single Half-Sine Wave
(JEDEC Method)
1000
f = 1 Mhz
T
j
= 25°C
300
GBPC35
200
GBPC15, 25
C
j
, CAPACITANCE (pF)
100
100
T
j
= 150°C
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
100
T
j
= 125°C
100
10
0.1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance (per element)
1.0
I
R
, INSTANTANEOUS REVERSE CURRENT (µA)
10
1.0
0.1
T
j
= 25°C
0.01
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics (per element)
2
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
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