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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N04EHE, NP80N04KHE
NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP80N04EHE-E1-AY
NP80N04EHE-E2-AY
NP80N04KHE-E1-AY
NP80N04KHE-E2-AY
Note1, 2
Note1, 2
Note1
Note1
Note1, 2
Note1, 2
Note1
Note1
LEAD PLATING
PACKING
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
NP80N04CHE-S12-AZ
NP80N04DHE-S12-AY
NP80N04MHE-S18-AY
NP80N04NHE-S18-AY
Sn-Ag-Cu
Tube 50 p/tube
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
Pure Sn (Tin)
Notes 1.
Pb-free (This product does not contain Pb in the external electrode.)
2.
Not for new design
(TO-220)
FEATURES
•
Channel temperature 175 degree rated
•
Super low on-state resistance
R
DS(on)
= 8.0 mΩ MAX. (V
GS
= 10 V, I
D
= 40 A)
•
Low input capacitance
C
iss
= 2200 pF TYP.
•
Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14239EJ7V0DS00 (7th edition)
Date Published October 2007 NS
Printed in Japan
1999, 2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Embedded System
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