SMD Type
PNP Transistors
2SB1308
Transistors
■
Features
●
Power Transistor
●
Excellent DC current Gain
●
Low Collector-emitter Saturation Voltage
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Rating
-30
-20
-6
-3
500
250
150
-55 to 150
A
mW
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= -100 uA， I
E
=0
Ic= -1 mA, I
B
=0
I
E
= -100 uA， I
C
=0
V
CB
= -25V , I
E
=0
V
EB
= -5V , I
C
=0
I
C
=-1.5 A, I
B
=-150 mA
I
C
=-1.5 A, I
B
=-150 mA
V
CE
= -2V, I
C
= -500 mA
V
CB
= -20V, I
E
= 0,f=1MHz
V
CE
= -6V, I
C
= -50 mA,f=30MHz
82
60
120
Min
-30
-20
-6
-0.5
-0.5
-0.45
-1.2
390
pF
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SB1308-P
82-180
BF P*
2SB1308-Q
120-270
BF Q*
2SB1308-R
180-390
BF R*
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1
SMD Type
PNP Transistors
2SB1308
■
Typical Characterisitics
-600
Transistors
Static Characteristic
-1.5mA
-1.35mA
-1.2mA
-1.05mA
-0.9mA
-0.75mA
-0.6mA
-0.45mA
-0.3mA
I
B
=-0.15mA
COMMON
EMITTER
T
a
=25
℃
1000
h
FE
——
I
C
COMMON EMITTER
V
CE
=-2V
COLLECTOR CURRENT I
C
(mA)
-500
-400
DC CURRENT GAIN h
FE
T
a
=100
℃
-300
T
a
=25
℃
300
-200
-100
-0
-0
-1
-2
-3
-4
-5
100
-1
-10
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
-100
I
C
(mA)
-1000
-3000
-1000
V
CEsat
——
I
C
-1200
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
-100
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-1000
-800
T
a
=100
℃
T
a
=25
℃
-10
T
a
=25
℃
T
a
=100
℃
-600
-400
β=10
-1
-1
COLLECTOR CURRENT
-10
-100
I
C
(mA)
-1000
-3000
-200
-1
β=10
-10
-100
-1000
-3000
COLLECTOR CURRENT
I
C
(mA)
-3000
-1000
I
C
——
V
BE
200
f
T
——
I
C
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
100
T =1
00
℃
a
T =2
5
℃
a
-100
30
-10
-1
COMMON EMITTER
V
CE
=-2V
-0
-300
-600
-900
-1200
T
a
=25
℃
10
-7
-10
COMMON EMITTER
V
CE
= -6V
-100
BASE-EMMITER VOLTAGE
V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
500
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
600
P
C
——
T
a
(pF)
C
ib
100
COLLECTOR POWER DISSIPATION
P
C
(mW)
T
a
=25
℃
500
400
CAPACITANCE C
C
ob
300
200
100
10
-0.1
0
REVERSE VOLTAGE
-1
V
(V)
-10
-20
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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