SMD Type
NPN Transistors
KTC3875
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
■
Features
+0.1
2.4
-0.1
●
High hFE
●
Low noise
●
Complementary to KTA1504
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
-0.1
1.9
+0.1
0.97
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
60
50
5
150
150
150
-55 to 150
mA
mA
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Noise figure
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
NF
C
ob
f
T
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 60 V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=100 mA, I
B
=10mA
I
C
=100 mA, I
B
=10mA
V
CE
= 6V, I
C
= 2mA
V
CE
=6V,I
C
=0.1mA,R
g
=10kΩ,f=1KHZ
V
CB
= 10V, I
E
= 0,f=1MHz
V
CE
= 10V, I
C
= 1mA
80
70
1
Min
60
50
5
100
100
0.25
1
700
10
3.5
dB
pF
MHz
nA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
KTC3875-O
70-140
ALO
KTC3875-Y
120-240
ALY
KTC3875-G
200-400
ALG
KTC3875-L
350-700
ALL
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1
SMD Type
NPN Transistors
KTC3875
■
Typical Characterisitics
4.0
3.5
Transistors
Static Characteristic
10uA
9uA
8uA
7uA
COMMON
EMITTER
T
a
=25
℃
800
h
FE
—— I
C
V
CE
= 6V
T
a
=100 C
o
(mA)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
h
FE
DC CURRENT GAIN
600
COLLECTOR CURRENT
I
C
6uA
5uA
4uA
3uA
2uA
I
B
=1uA
0
2
4
6
8
10
400
o
T
a
=25 C
200
0
1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
10
I
C
(mA)
100
150
1000
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
β=10
200
V
CEsat
——
β=10
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
800
T
a
=25
℃
150
600
100
T
a
=100
℃
400
50
T
a
=100
℃
T
a
=25
℃
200
0.1
1
10
100 150
0
0.1
1
10
100 150
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR POWER DISSIPATION
P
c
(mW)
150
100
I
C
—— V
BE
200
175
150
125
100
75
50
25
0
P
c
——
T
a
I
C
(mA)
COLLECTOR CURRENT
10
T
a
=100 C
o
T
a
=25
℃
1
V
CE
=6V
0.1
300
400
500
600
700
800
900
0
25
50
75
100
125
150
BASE-EMITTER VOLTAGE
V
BE
(mV)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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