General Purpose, Low Noise
NPN Silicon Bipolar Transistor
Technical Data
AT-41511
AT-41533
Features
• General Purpose NPN
Bipolar Transistor
• 900 MHz Performance:
AT-41511:
1 dB NF, 15.5 dB G
A
AT-41533:
1 dB NF, 14.5 dB G
A
• Characterized for 3, 5, and
8 Volt Use
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-and-Reel Packaging
Option Available
[1]
Description
Hewlett-Packard’s AT-41511 and
AT-41533 are general purpose
NPN bipolar transistors that offer
excellent high frequency
performance at an economical
price. The AT-41533 uses the
3 lead SOT-23, while the AT-415 11
places the same die in the lower
parasitic 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 4 micron emitter-to-emitter
pitch of these transistors yields
high performance products that
can perform a multiplicity of
tasks. The 14 emitter finger
interdigitated geometry yields an
intermediate-sized transistor with
easy to match to impedances, low
noise figure, and moderate
power.
Optimized for best performace
from a 5 to 8 volt bias supply,
these transistors are also good
performers at 2.7 V. Applications
include use in wireless systems as
an LNA, gain stage, buffer,
oscillator, or active mixer.
An optimum noise match near
50 ohms at 900 MHz makes these
devices particularly easy to use as
LNAs. Typical amplifier designs
at 900 MHz yield 1 dB noise
figures with 15 dB or more
associated gain at a 5 V, 5 mA
bias, with good gain and noise
figure obtainable at biases as low
as 2 mA.
The AT-415 series bipolar
transistors are fabricated using
Hewlett-Packard’s 10 GHz f
T
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by
the use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
Outline Drawing
EMITTER COLLECTOR
415
BASE
EMITTER
SOT 143 (AT-41511)
COLLECTOR
415
BASE
EMITTER
SOT 23 (AT-41533)
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices.”
5965-8929E
4-134
AT-41511, AT-41533 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
20
12
50
225
150
-65 to 150
Thermal Resistance:
[2]
θ
jc
=550°C/W
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. T
Mounting Surface
= 25°C.
3. Derate at 1.82 mW/°C for T
C
> 26°C.
Electrical Specifications,
T
A
= 25°C
AT-41511
Symbol
h
FE
I
CBO
I
EBO
Parameters and Test Conditions
Forward Current Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
V
CE
= 5 V
I
C
= 5 mA
V
CB
= 3 V
V
EB
= 1 V
Units Min
-
µA
µA
30
Typ
150
Max
270
0.2
1.0
30
AT-41533
Min
Typ
150
Max
270
0.2
1.0
Characterization Information,
T
A
= 25°C
AT-41511 AT-41533
Symbol
NF
G
A
P
1dB
G
1dB
IP
3
|S
21E
|
2
Parameters and Test Conditions
Noise Figure
V
CE
= 5 V, I
C
= 5 mA
Associated Gain
V
CE
= 5 V, I
C
= 5 mA
Power at 1 dB Gain Compression (opt tuning)
V
CE
= 5 V, I
C
= 25 mA
Gain at 1 dB Gain Compression (opt tuning)
V
CE
= 5 V, I
C
= 25 mA
Output Third Order Intercept Point,
V
CE
= 5 V, I
C
=25 mA (opt tuning)
Gain in 50
Ω
system; V
CE
= 5 V, I
C
= 5 mA
f = 0.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 2.4 GHz
Units
dB
dB
dBm
dB
dBm
dB
Min Typ Min Typ
1.0
1.7
15.5
11
14.5
17.5
25
13.5 15.5 10.8
7.9
1.0
1.6
14.5
9
14.5
14.5
25
12.8
5.2
Ordering Information
Part Number
AT-41511-BLK
AT-41511-TR1
AT-41533-BLK
AT-41533-TR1
Increment
100
3000
100
3000
Comments
Bulk
7" Reel
Bulk
7" Reel
4-135
AT-41511, AT-41533 Typical Performance
3.0
25 mA
2.5
NOISE FIGURE (dB)
NOISE FIGURE (dB)
3.0
25 mA
2.5
NOISE FIGURE (dB)
3.0
2.5
2 mA
25 mA
2.0
10 mA
1.5
1.0
0.5
0
0.1
5 mA
2.0
1.5
1.0
0.5
0
0.1
10 mA
2, 5 mA
2.0
1.5
1.0
0.5
0
0.1
10 mA
5 mA
0.6
1.1
1.6
2.1
2.6
0.6
1.1
1.6
2.1
2.6
0.6
1.1
1.6
2.1
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 2. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at V
CE
= 5 V.
Figure 3. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at V
CE
= 8 V.
20
10, 25 mA
15
5 mA
2 mA
10
10, 25 mA
5 mA
2 mA
PKG 11
25
20
PKG 11
20
PKG 11
15
20
15
G
a
PKG 11 (dB)
G
a
PKG 33 (dB)
G
a
(dB)
15
10
10, 25 mA
5 mA
10, 25 mA
5 mA
G
a
(dB)
PKG 33
PKG 33
10
10, 25 mA
5 mA
10, 25 mA
5 mA
5
PKG 33
0
0.1
0.6
1.1
1.6
2.1
10
5
5
5
2.6
0
0.1
0.6
1.1
1.6
2.1
2.6
0
0.1
0.6
1.1
1.6
2.1
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at V
CE
= 2.7 V.
Figure 5. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at V
CE
= 5 V.
Figure 6. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at V
CE
= 8 V.
20
20
20
25 mA
15
15
25 mA
15
P
1 dB
(dBm)
P
1 dB
(dBm)
P
1 dB
(dBm)
10 mA
10
25 mA
10 mA
5 mA
10
10 mA
10
5 mA
5 mA
5
5
5
0
0.1
0.6
1.1
1.6
2.1
2.6
0
0.1
0.6
1.1
1.6
2.1
2.6
0
0.1
0.6
1.1
1.6
2.1
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. AT-41511 and AT-41533
P
1dB
vs. Frequency and Bias at
V
CE
= 2.7 V, with Optimal Tuning.
Figure 8. AT-41511 and AT-41533
P
1dB
vs. Frequency and Bias at
V
CE
= 5 V, with Optimal Tuning.
Figure 9. AT-41511 and AT-41533
P
1dB
vs. Frequency and Bias at
V
CE
= 8 V, with Optimal Tuning.
4-136
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