TX-1N5441A datasheet, PDF - EEWORLD Datasheet

TX-1N5441A: DescriptionVariable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7; CategoryDiscrete semiconductor diode; File Size115KB，3 Pages; ManufacturerLockheed Martin

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TX-1N5441A Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7

Parameter Name	Attribute value
Maker	Lockheed Martin
package instruction	O-LALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	HIGH RELIABILITY
Minimum breakdown voltage	30 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode Capacitance Tolerance	10%
Minimum diode capacitance ratio	2.5
Nominal diode capacitance	6.8 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 code	DO-7
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.4 W
Certification status	Not Qualified
minimum quality factor	450
Maximum reverse current	0.02 µA
Reverse test voltage	25 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Varactor Diode Classification	ABRUPT

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