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TX-1N5449C

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 27pF C(T), 30V, Silicon, Abrupt, DO-7
CategoryDiscrete semiconductor    diode   
File Size115KB,3 Pages
ManufacturerLockheed Martin
Download Datasheet Parametric View All

TX-1N5449C Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 27pF C(T), 30V, Silicon, Abrupt, DO-7

TX-1N5449C Parametric

Parameter NameAttribute value
MakerLockheed Martin
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance2%
Minimum diode capacitance ratio2.6
Nominal diode capacitance27 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor350
Maximum reverse current0.02 µA
Reverse test voltage25 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
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