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1M5473B

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 56pF C(T), 30V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size145KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

1M5473B Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 56pF C(T), 30V, Silicon, Abrupt

1M5473B Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionR-PDSO-N2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio2.9
Nominal diode capacitance56 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeR-PDSO-N2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
minimum quality factor300
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2e-8 µA
Reverse test voltage25 V
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
Varactor Diode ClassificationABRUPT
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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