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1N5471ACHIP

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 30V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size116KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

1N5471ACHIP Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 30V, Silicon, Abrupt

1N5471ACHIP Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionX-XUUC-N
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH Q
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio2.9
Nominal diode capacitance39 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeX-XUUC-N
Number of components1
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Certification statusNot Qualified
minimum quality factor450
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2e-8 µA
Reverse test voltage25 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Varactor Diode ClassificationABRUPT
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