1M1405 datasheet, PDF - EEWORLD Datasheet

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1M1405: DescriptionVariable Capacitance Diode, 250pF C(T), 12V, Silicon, Hyperabrupt; CategoryDiscrete semiconductor diode; File Size119KB，1 Pages; ManufacturerInternational Semiconductor Inc

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1M1405 Overview

Variable Capacitance Diode, 250pF C(T), 12V, Silicon, Hyperabrupt

1M1405 Parametric

Parameter Name	Attribute value
Maker	International Semiconductor Inc
package instruction	R-PDSO-N2
Reach Compliance Code	unknow
ECCN code	EAR99
Minimum breakdown voltage	12 V
Configuration	SINGLE
Diode Capacitance Tolerance	20%
Minimum diode capacitance ratio	10
Nominal diode capacitance	250 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	R-PDSO-N2
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.4 W
Certification status	Not Qualified
minimum quality factor	200
Maximum repetitive peak reverse voltage	10 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	DUAL
Varactor Diode Classification	HYPERABRUPT

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1M1405 Related Products

	1M1405	MV1406	MV1401	MV1402	MV1405
Description	Variable Capacitance Diode, 250pF C(T), 12V, Silicon, Hyperabrupt	Variable Capacitance Diode, 100pF C(T), 12V, Silicon, Hyperabrupt, DO-7	Variable Capacitance Diode, 550pF C(T), 12V, Silicon, Hyperabrupt, DO-14	Variable Capacitance Diode, 360pF C(T), 12V, Silicon, Hyperabrupt, DO-14	Variable Capacitance Diode, 250pF C(T), 12V, Silicon, Hyperabrupt, DO-7
Maker	International Semiconductor Inc	International Semiconductor Inc	International Semiconductor Inc	International Semiconductor Inc	International Semiconductor Inc
package instruction	R-PDSO-N2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Reach Compliance Code	unknow	unknown	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	12 V	12 V	12 V	12 V	12 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode Capacitance Tolerance	20%	20%	20%	20%	20%
Minimum diode capacitance ratio	10	10	14	10	10
Nominal diode capacitance	250 pF	100 pF	550 pF	360 pF	250 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
JESD-30 code	R-PDSO-N2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Package body material	PLASTIC/EPOXY	GLASS	GLASS	GLASS	GLASS
Package shape	RECTANGULAR	ROUND	ROUND	ROUND	ROUND
Package form	SMALL OUTLINE	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum power dissipation	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
minimum quality factor	200	200	200	200	200
Maximum repetitive peak reverse voltage	10 V	12 V	12 V	12 V	12 V
surface mount	YES	NO	NO	NO	NO
Terminal form	NO LEAD	WIRE	WIRE	WIRE	WIRE
Terminal location	DUAL	AXIAL	AXIAL	AXIAL	AXIAL
Varactor Diode Classification	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT
Shell connection	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED
JEDEC-95 code	-	DO-7	DO-14	DO-14	DO-7

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