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1N3960C

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size185KB,2 Pages
ManufacturerSemicon Components Inc
Download Datasheet Parametric View All

1N3960C Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon,

1N3960C Parametric

Parameter NameAttribute value
MakerSemicon Components Inc
package instructionO-MUPM-D1
Reach Compliance Codeunknow
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage300 V
Maximum reverse current400 µA
Maximum reverse recovery time1.5 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
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