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JAN1N5641A

Description
Trans Voltage Suppressor Diode, 1500W, 19V V(RWM), Unidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size67KB,15 Pages
ManufacturerSemicon Components Inc
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JAN1N5641A Overview

Trans Voltage Suppressor Diode, 1500W, 19V V(RWM), Unidirectional, 1 Element, Silicon,

JAN1N5641A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSemicon Components Inc
package instructionO-XALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage23.1 V
Minimum breakdown voltage20.9 V
Breakdown voltage nominal value22 V
Shell connectionISOLATED
Maximum clamping voltage30.6 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-XALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
GuidelineMIL-19500/500
Maximum repetitive peak reverse voltage19 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 8 October 1997
INCH-POUND
MIL-PRF-19500/500C
8 July 1997
SUPERSEDING
MIL-S-19500/500B
19 January 1993
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR
UNIPOLAR TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 1500 watt, peak, pulse power, silicon, transient, voltage
suppressor diodes. Four levels of product assurance are provided for each device as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1.
1.3 Maximum ratings. Maximum ratings are as shown in columns 5 through 8 of table III herein, and as follows:
P
PP
= 1500 W (see figure 3) at t
p
= 1.0 ms.
P
M(AV)
= 1.0 W (derate at 6.67 mW/°C above T
A
= +25°C) (see 6.3).
I
FSM
= 200 A (pk) at t
p
= 8.3 ms (T
A
= +25°C).
-55°C
T
J
+175°C (ambient), -55°C
T
STG
+175°C (ambient).
1.4 Primary electrical characteristics at T
A
= +25°. Primary electrical characteristics are shown in columns 2 and 4 of table III herein.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in sections 3 and 4 of this specification, whether or not they are listed.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH
43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or
by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961

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