specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
•
4A, 150 V.
R
DS(ON)
= 80 mΩ @ V
GS
= 10 V
R
DS(ON)
= 90 mΩ @ V
GS
= 6 V
•
Low gate charge
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
150
±20
(Note 1a)
Units
V
V
A
W
4
30
2.5
1.2
1.0
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS2570
Device
FDS2570
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2001
Fairchild Semiconductor Corporation
FDS2570 Rev C(W)
FDS2570
Electrical Characteristics
Symbol
W
DSS
I
AR
T
A
= 25°C unless otherwise noted
Parameter
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
DD
= 75 V,
I
D
= 4.4 A
Min
Typ
Max Units
375
4.4
mJ
A
Drain-Source Avalanche Ratings
(Note 1)
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 120 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
2
2.6
-7
60
63
120
30
20
80
90
158
150
150
1
100
–100
V
mV/°C
µA
NA
NA
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V,
I
D
= 4 A
I
D
= 3.8 A
V
GS
= 6 V,
V
GS
= 10 V, I
D
= 4 A, T
J
= 125°C
V
GS
= 10 V,
V
DS
= 10 V,
V
DS
= 10 V
I
D
= 4 A
4
V
mV/°C
mΩ
A
S
I
D(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 75 V,
f = 1.0 MHz
V
GS
= 0 V,
1907
117
33
PF
PF
PF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 75 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
12
7
41
21
19
14
65
34
62
Ns
Ns
Ns
Ns
NC
NC
NC
V
DS
= 75 V,
V
GS
= 10 V
I
D
= 4 A,
39
7
9
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= 2.1 A
Voltage
2.1
(Note 2)
A
V
0.7
1.2
FDS2570 Rev C(W)
FDS2570
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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