Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
TIP41, TIP41A, TIP41B, TIP41C
TIP42, TIP42A, TIP42B, TIP42C
TIP 41, 41A, 41B, 41C
TIP 42, 42A, 42B, 42C
NPN PLASTIC POWER TRANSISTORS
PNP PLASTIC POWER TRANSISTORS
General Purpose Amplifier and Switching Applications
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4
1
2
3
B
H
F
C
E
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
MIN .
14.42
9.63
3.56
MAX.
N
L
O
1 2
3
D
G
J
M
16.51
10.67
4.83
0.90
1.15
1.40
3.75
3.88
2.29
2.79
2.54
3.43
0.56
12.70 14.73
2.80
4.07
2.03
2.92
31.24
DEG 7
A
O
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to T
C
= 25°C
Junction temperature
Collector-emitter saturation voltage
I
C
= 6 A; I
B
= 0.6 A
D.C. current gain
I
C
= 3 A; V
CE
= 4 V
V
CBO
V
CEO
I
C
P
tot
T
j
V
CEsat
h
FE
41
42
max. 40
max. 40
max.
max.
max.
max.
min.
max.
41
42
max. 40
max. 40
max.
max.
41A 41B
42A 42B
60
80
60
80
6.0
65
150
1.5
15
75
41A 41B
42A 42B
60
80
60
80
5.0
6.0
41C
42C
100
100
41C
42C
100
100
V
V
A
W
°C
V
RATINGS
(at T
A
=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
V
CBO
V
CEO
V
EBO
I
C
All dimin sions in mm.
K
V
V
V
A
Continental Device India Limited
Data Sheet
Page 1 of 3
TIP41, TIP41A, TIP41B, TIP41C
TIP42, TIP42A, TIP42B, TIP42C
Collector current (Peak value)
Base current
Total power dissipation up to T
C
= 25°C
Derate above 25°C
Total power dissipation up to T
A
= 25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to ambient
From junction to case
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
Collector cutoff current
I
B
= 0; V
CE
= 30 V
I
B
= 0; V
CE
= 60 V
V
BE
= 0; V
CE
= V
CEO
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown voltages
I
C
= 30 mA; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltage
I
C
= 6 A; I
B
= 0.6 A
Base-emitter on voltage
I
C
= 6 A; V
CE
= 4 V
D.C. current gain
I
C
= 0.3 A; V
CE
= 4 V
I
C
= 3 A; V
CE
= 4 V
Small-signal current gain
I
C
= 0.5 A; V
CE
= 10 V; f = 1 KHz
Transition frequency
I
C
= 0.5 A; V
CE
= 10 V; f = 1 MHz
I
CM
I
B
P
tot
P
tot
T
j
T
stg
R
th j–a
R
th j–c
max.
max.
max.
max.
max.
max.
max.
10
2.0
65
0.52
2.0
0.016
150
–65 to +150
62.5
1.92
A
A
W
W
/°C
W
W
/°C
°C
ºC
°C/W
°C/W
41
42
I
CEO
I
CEO
I
CES
I
EBO
max. 0.7
max. –
max.
max.
41A 41B 41C
42A 42B 42C
0.7
–
–
0.7
0.4
1.0
60
60
5.0
1.5
2.0
30
15
75
20
3
MHz
80
80
100
100
–
0.7
mA
mA
mA
mA
V
V
V
V
V
V
CEO(sus)
* min. 40
V
CBO
min. 40
V
EBO
min.
V
CEsat
*
V
BE(on)
*
h
FE
*
h
FE*
|h
fe
|
f
T
max.
max.
min.
min.
max.
min.
min. (1)
* Pulse test: pulse width
≤
300 µs, duty cycle
≤
2%.
(1) f
T
= |h
fe
|• f
test
Continental Device India Limited
Data Sheet
Page 2 of 3
Power technology
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