TIP34C datasheet, PDF - EEWORLD Datasheet

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TIP34C: Description10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218; CategoryDiscrete semiconductor The transistor; File Size60KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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TIP34C Overview

10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218

TIP34C Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-218AC
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	80 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	3 MHz
VCEsat-Max	4 V

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(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

Preferred

devices are Motorola recommended choices for future use and best overall value.

hFE , DC CURRENT GAIN

•

. . . for general–purpose power amplifier and switching applications.

Complementary Silicon

High-Power Transistors

SEMICONDUCTOR TECHNICAL DATA

MOTOROLA

THERMAL CHARACTERISTICS

MAXIMUM RATINGS

Junction–To–Free–Air Thermal Resistance

Thermal Resistance, Junction to Case

Operating and Storage Junction

Temperature Range

Total Power Dissipation

@ TC = 25

Derate above 25

Base Current — Continuous

Collector Current — Continuous

Peak (1)

Emitter–Base Voltage

Collector–Base Voltage

Collector–Emitter Voltage

10 A Collector Current

Low Leakage Current — ICEO = 0.7 mA @ 60 V

Excellent dc Gain — hFE = 40 Typ @ 3.0 A

High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5 A, f = 1.0 MHz

Characteristic

Rating

200

100

500

5.0

0.1

10%.

Symbol

TJ, Tstg

VCEO

θJC

θJA

VCB

VEB

Figure 1. DC Current Gain

NPN

PNP

1.0

IC, COLLECTOR CURRENT (A)

TIP33B

TIP34B

80 V

– 65 to + 150

35.7

1.56

Max

0.64

3.0

5.0

TIP33C

TIP34C

100 V

VCE = 4.0 V

TJ = 25°C

Watts

C/W

Unit

Adc

Vdc

10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

100 VOLTS

80 WATTS

*Motorola Preferred Device

TIP33B*

TIP33C

PNP

TIP34B*

TIP34C

CASE 340D–01

TO–218AC

Order this document

by TIP33B/D

NPN

TIP33B TIP33C TIP34B TIP34C

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA / EUROPE:

Motorola Literature Distribution;

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

MFAX:

RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609

INTERNET:

http://Design–NET.com

JAPAN:

Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

HONG KONG:

Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

◊

Motorola Bipolar Power Transistor Device Data

*TIP33B/D*

TIP33B/D

TIP34C Related Products

	TIP34C	TIP33C	TIP33B
Description	10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218	10 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-218	10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow	unknow	unknow
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	10 A	10 A	10 A
Collector-emitter maximum voltage	100 V	100 V	80 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	20
JEDEC-95 code	TO-218AC	TO-218AC	TO-218AC
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	NPN	NPN
Maximum power consumption environment	80 W	80 W	80 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	3 MHz	3 MHz	3 MHz
VCEsat-Max	4 V	4 V	4 V
ECCN code	EAR99	-	EAR99

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