SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
A
Q
TIP34C
EPITAXIAL PLANAR PNP TRANSISTOR
B
K
FEATURES
Complementary to TIP33C.
Recommended for 45W 50W Audio Frequency
Amplifier Output Stage.
D
F
E
I
C
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Tc=25
)
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-100
-100
-6
-10
-3
80
150
-55
150
UNIT
V
V
V
A
A
W
d
P
P
T
M
1
2
3
DIM
A
B
C
D
d
E
F
G
H
I
J
K
L
M
P
Q
T
MILLIMETERS
15.9 MAX
4.8 MAX
_
20.0 + 0.3
_
2.0 + 0.3
1.0+0.3/-0.25
2.0
1.0
3.3 MAX
9.0
4.5
2.0
1.8 MAX
_
20.5 + 0.5
2.8
_
5.45 + 0.2
_
Φ3.2
+ 0.2
0.6+0.3/-0.1
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification R:55~110,
O:80~160
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
TEST CONDITION
V
CB
=-100V, I
E
=0
V
EB
=-6V, I
C
=0
I
C
=-25mA, I
B
=0
V
CE
=-4V, I
C
=-2A
I
C
=-4A, I
B
=-0.4A
V
CE
=-12V, I
C
=-0.5A
V
CB
=-10V, I
E
=0, f=1MHz
MIN.
-
-
-100
55
-
-
-
TYP.
-
-
-
-
-
20
150
MAX.
-10
-10
-
160
-1.0
-
-
V
MHz
pF
UNIT
A
A
V
2001. 1. 10
Revision No : 1
L
G
J
H
TO-3P(N)
1/2
TIP34C
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
1
0.5
0.3
TRANSITION THERMAL RESISTANCE
r
th
( C/W)
COMMON EMITTER
I
C
/C
B
=10
r
th
- t
w
10
5
3
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SIGLE NONREPETITIVE PULSE)
0.1
0.05
0.03
1
0.5
0.3
NO H
I
EAT S
NK
0.01
0.001
0.1
1
3
10
30
100
300
1K
2K
PULSE WIDTH t
w
(sec)
0.01
0.1
1
10
BASE CURRENT I
C
(A)
h
FE
- I
C
V
CE
=-4V
f
T
- I
E
CUT-OFF FREQUENCY f
T
(MHz)
30
V
CE
=-12V
1K
DC CURRENT GAIN h
FE
500
300
Tc=125 C
Tc=25 C
20
100
50
30
Tc=-30 C
C
5
12
=
Tc
5 C
=2
Tc
C
0
=-3
Tc
10
10
0.001
0.01
0.1
1
10
0
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I
C
(A)
EMITTER CURRENT I
E
(A)
MAXIMUM POWER DISSIPATION P
C
(W)
Pc - Ta
100
80
60
40
20
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR CURRENT I
C
(A)
Tc=Ta
INFINITE HEAT SINK
SAFE OPERATING AREA
-30
I
C
MAX.(PULSED)*
-10
-5
-3
-1
-0.5
-0.3
-0.1
-0.05
-0.03
-1
I
C
MAX
(CONTINUOUS)
DC
30
mS
*
OP
Tc
ER
=2
AT
5
I
C
ON
10
0
µ
S*
1.0
*
mS
* SINGLE NONREPETITIVE
PLUSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-3
-10
-30
-100
-200
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2001. 1. 10
Revision No : 1
2/2
stm32/stm8
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