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IS62US1288SL-55H

Description
Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, STSOP1-32
Categorystorage    storage   
File Size73KB,12 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Download Datasheet Parametric View All

IS62US1288SL-55H Overview

Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, STSOP1-32

IS62US1288SL-55H Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeTSOP1
package instructionSTSOP1-32
Contacts32
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time55 ns
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length11.8 mm
memory density1048576 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)2.2 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
ISSI
TARGET SPECIFICATION
IS62Ux1288 Series
128K x 8 LOW VOLTAGE, LOW POWER
CMOS STATIC RAM
®
ADVANCE INFORMATION
MAY 1999
FEATURES
• Voltage range options
-- 1.6V to 2.0V: IS62UT1288
-- 1.8V to 2.2V: IS62US1288
-- 2.3V to 2.7V: IS62UR1288
-- 2.7V to 3.3V: IS62UP1288
• Battery backup (SL/LL version)
-- 1.0V (min.) data retention
• Access times: 55, 70, and 100 ns
• Fully static operation and tri-state outputs
• Industrial temperature available
• Available in 36-ball mini BGA and a 32-pin
sTSOP (I)
DESCRIPTION
The
ISSI
IS62Ux1288 series is a low voltage, 131,072
words by 8 bits, CMOS SRAM. It is fabricated using
ISSI
's
low voltage, six transistor (6T), CMOS technology. The
series is targeted to satisfy the demands of the state-of-
the-art technologies such as cell phones and pagers.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels. Additionally, easy
memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE
and
OE
. The active LOW Write
Enable (
WE
) controls both writing and reading of the
memory.
The IS62Ux1288 series is packaged in a 36-ball mini BGA
and a 32-pin sTSOP (I).
PRODUCT SERIES OVERVIEW
Part No.
IS62UP1288
IS62UP1288
(1)
IS62UR1288
IS62UR1288
(1)
IS62US1288
IS62US1288
(1)
IS62UT1288
IS62UT1288
(1)
Voltage (V)
3.0,
±0.3
3.0,
±0.3
2.5,
±0.2
2.5,
±0.2
2.0,
±0.2
2.0,
±0.2
1.8,
±0.2
1.8,
±0.2
Speeds (ns)
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
Active I
CC
(mA)
25 @ 70 ns
25 @ 70 ns
15 @ 70 ns
15 @ 70 ns
10 @ 70 ns
10 @ 70 ns
10 @ 70 ns
10 @ 70 ns
Standby Current (
µ
A)
LL
SL
10
10
10
10
10
10
10
10
2
2
2
2
2
2
2
2
Temperature (
°
C)
0 to 70
40 to 85
0 to 70
40 to 85
0 to 70
40 to 85
0 to 70
40 to 85
Note:
1. Current value is max.
This document is a TARGET SPECIFICATION only. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible
product. We assume no responsibility for any errors which may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
2231 Lawson Lane • Santa Clara, CA 95054-3311 • 1-800-379-4774 • Fax: (408) 588-0806
e-mail: sales@issiusa.com •
www.issiusa.com
Integrated Silicon Solution, Inc. — 1-800-379-4774
TARGET SPECIFICATION
SR067-0T
05/01/99
1
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