SEMICONDUCTOR
10T Series
TRIACs, 10A
Snubberless and Standard
RoHS
RoHS
MAIN FEATURES
SYMBOL
I
T(RMS)
V
DRM
/V
RRM
I
GT(Q1)
VALUE
10
600 to 1000
25 to 50
UNIT
A
V
mA
A1
A2
G
A2
1
2
3
DESCRIPTION
The 10T
triac series is suitable for general purpose AC
switching. They can be used as an ON/OFF function in
applications such as static relays, heating regulation,
induction motor starting circuits... or for phase control
operation in light dimmers, motor speed controllers,...
The snubberless version are specially recommended
for use on inductive loads, thanks to their high
commutation performances.
By using an internal ceramic pad, the 10T series provides
voltage insulated tab (rated at 2500V
RMS
) complying
with UL standards (File ref. :E320098)
TO-220AB
(non-Insulated)
(10TxxA)
TO-220AB
(lnsulated)
(10TxxAI)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current
(full
sine wave)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
SYMBOL
TO-220AB
I
T(RMS)
TO-220AB insulated
F =50 Hz
F =60 Hz
I t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
2
TEST CONDITIONS
T
c
= 105ºC
T
c
= 95ºC
t = 20 ms
t = 16.7 ms
VALUE
10
100
105
50
UNIT
A
I
TSM
A
A
2
s
A/µs
A
W
ºC
t p = 10 ms
F =100 Hz
T
p
=20 µs
T
j
=125ºC
T
j
=125ºC
T
j
=125ºC
50
4
1
- 40
to
+ 150
- 40
to
+ 125
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Page 1 of 6
SEMICONDUCTOR
10T Series
RoHS
RoHS
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
SNUBBERLESS (3 quadrants)
10Txxxx
SYMBOL
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
dV/dt
(2)
(dI/dt)c
(2)
V
D
= V
DRM
, R
L
= 3.3KΩ
T
j
= 125°C
I
T
= 500 mA
I
-
III
I
G
= 1.2 I
GT
II
V
D
= 67% V
DRM,
gate open, T
j
= 125°C
Without snubber, T
j
= 125°C
MAX.
MIN.
MIN.
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
I
-
II
-
III
I
-
II
-
III
MAX.
MIN.
MAX.
35
50
60
500
5.5
1.3
0.2
50
70
mA
80
1000
9
V/µs
A/ms
V
V
mA
MAX.
Unit
CW
35
BW
50
mA
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
Standard (4 quadrants)
10Txxxx
SYMBOL
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
IV
ALL
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
, gate open, T
j
= 125°C
(dI/dt)c = 4.4 A/ms, T
j
= 125°C
I
-
III
-
IV
II
dV/dt
(2)
(dV/dt)c
(2)
MIN.
MIN.
ALL
MAX.
MAX.
25
40
80
200
5
C
MAX.
25
50
1.3
0.2
50
50
100
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
UNIT
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
STATIC CHARACTERISTICS
SYMBOL
V
TM(2)
V
t0
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 14 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
=
V
RRM
T
j
= 125°C
TEST CONDITIONS
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
MAX.
1
mA
MAX.
MAX.
MAX.
VALUE
1.55
0.85
40
5
UNIT
V
V
mΩ
µA
Note
1:
Minimum l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
For both polarities of A2 referenced to A1.
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Page 2 of 6
SEMICONDUCTOR
10T Series
RoHS
RoHS
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
R
th(j-a)
Junction to case
(AC)
Junction to ambient
TO-220AB
TO-220AB Insulated
TO-220AB
TO-220AB Insulated
VALUE
1.5
2.4
60
UNIT
°C/W
°C/W
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
10TxxA-B/10 TxxAl-B
10TxxA-BW/10TxxAl-BW
10TxxA-C/10TxxAl-C
10TxxA-CW/10TxxAl-CW
V
V
V
V
800
V
V
V
V
V
1000
V
V
V
V
V
50
mA
50
mA
25
mA
35
mA
Standard
Snubberless
Standard
Snubberless
TO-220AB
TO-220AB
TO-220AB
TO-220AB
SENSITIVITY
TYPE
PACKAGE
ORDERING INFORMATION
ORDERING TYPE
10TxxA-yy
10TxxAI-yy
MARKING
10TxxA-yy
10TxxAI-yy
PACKAGE
TO-220AB
TO-220AB (insulated)
WEIGHT
2.0g
2.3g
BASE Q,TY
50
50
DELIVERY MODE
Tube
Tube
Note:
xx
=
voltage, yy
=
sensitivity
ORDERING INFORMATION SCHEME
10 T 06
Current
10 = 10A
A - BW
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
IGT Sensitivity
B
= 50mA
Standard
C
= 25mA
Standard
BW
= 50mA
Standard
CW
= 35mA
Standard
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Page 3 of 6
SEMICONDUCTOR
10T Series
RoHS
RoHS
Fig.1 Maximum power dissipation versus RMS on-state
current
(full
cycle)
P(W)
Fig.2 RMS on-state current versus case temperature
(full
cycle)
I
T(RMS)
(A)
12
11
10
9
8
7
6
5
4
3
2
1
0
TO-220AB
13
12
11
10
9
8
7
6
5
4
3
2
1
0
TO-220AB
insulated
I T(RMS) (A)
T c (°C)
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
10
Fig.3 Relative variation of thermal impedance
versus pulse duration
K=[Z th
/R
th
]
1E+0
Zth
(
j
-
c
)
Fig.4 On-state characteristics (maximum values)
I
TM
(A)
100
T j max
V to =0.85V
R d =40mΩ
T j =T j max
Zth
(
j
-
a
)
1E-1
10
T j =25°C
t
p
(s)
1E-2
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
1
0.5
1.0
1.5
2.0
V TM (V)
2.5
3.0
3.5
4.0
4.5
5.0
Fig.5 Surge peak on-state current versus number
of cycles
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l 2 t
I
TSM
(A),
I t
(A
s)
1000
Tj initial=25°C
2
2
I
TSM
(A)
110
100
90
80
70
60
50
40
30
20
10
0
1
10
Repetitive
T c =95°C
t=20ms
Non repetitive
T j initial=25°C
One cycle
dl/dt limitation
50A/µs
I TSM
100
l²t
Number of cycles
10
t p (ms)
100
1000
0.01
0.10
1.00
10.00
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Page 4 of 6
SEMICONDUCTOR
10T Series
RoHS
RoHS
Fig.7 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values)
I
GT
,I
H
,I
L
[T
j
] /
I
GT
,I
H
,I
L
[T
j
=25
°C
]
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
T j (°C)
I H &I L
l GT
Fig.8 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values)
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
100
120
140
B
C
BW/CW
(dV/dt)c (V/µs)
0.1
1.0
10.0
100.0
40
60
Fig.9 Relative variation of critical rate of decrease of
main current versus junction temperature
(dI/dt)c [T
j
] / (dI/dt)c [T
j
specified]
6
5
4
3
2
1
0
T j (°C)
0
25
50
75
100
125
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Page 5 of 6
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