APTGF30H60T3G
Full - Bridge
NPT IGBT Power Module
V
CES
= 600V
I
C
= 30A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
- Symmetrical design
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
16
15
28 27 26 25
29
30
23 22
20 19 18
31
32
2
3
4
7
8
10 11 12
14
13
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
RoHS compliant
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
APTGF30H60T3G – Rev 2 October, 2012
Max ratings
600
42
30
100
±20
140
60A@500V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-7
APTGF30H60T3G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(on)
V
GE(th)
I
GES
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
V
GE
= 0V
V
CE
= 600V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
V
GE
=15V
I
C
= 30A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 1mA
V
GE
= 20V, V
CE
= 0V
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
V
GE
= 15V
V
Bus
= 300V
I
C
=30A
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 30A
R
G
= 6.8
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 30A
R
G
= 6.8
V
GE
= 15V
T
j
= 125°C
V
Bus
= 400V
I
C
= 30A
T
j
= 125°C
R
G
= 6.8
Min
Typ
Max
250
500
2.45
6
400
Unit
µA
V
V
nA
1.7
4
2.0
2.2
Dynamic Characteristics
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Min
Typ
1350
193
120
99
10
60
30
12
80
15
32
12
90
21
0.3
mJ
0.8
Max
Unit
pF
nC
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
I
RM
I
F
V
F
Maximum Peak Repetitive Reverse Voltage
Test Conditions
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
I
F
= 15A
I
F
= 30A
I
F
= 15A
I
F
= 15A
V
R
= 400V
di/dt =200A/µs
Min
600
Typ
Max
150
500
Unit
V
µA
A
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
V
R
=600V
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
40
150
95
520
ns
nC
www.microsemi.com
2-7
APTGF30H60T3G – Rev 2 October, 2012
15
1.6
1.9
1.4
1.8
V
APTGF30H60T3G
Temperature sensor NTC
(see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Resistance @ 25°C
R
25
B
25/85
T
25
= 298.15 K
R
T
½
R
25
1
1
R
T
: Thermistor value at T
exp
B
25 / 85
T
T
25
T: Thermistor temperature
Min
Typ
50
3952
Max
Unit
k
K
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
IGBT
Diode
4000
-40
-40
-40
2
Typ
Max
0.9
2.0
150
125
100
3
110
Unit
°C/W
V
°C
N.m
g
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
SP3 Package outline
(dimensions in mm)
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-7
APTGF30H60T3G – Rev 2 October, 2012
APTGF30H60T3G
Typical Performance Curve
Output characteristics (V
GE
=15V)
Output Characteristics (V
GE
=10V)
100
Ic, Collector Current (A)
T
J
=-55°C
250µs Pulse Test
< 0.5% Duty cycle
T
J
=-55°C
120
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
90
T
J
=25°C
75
T
J
=25°C
60
T
J
=125°C
50
30
25
T
J
=125°C
0
0
1
2
3
4
V
CE
, Collector to Emitter Voltage (V)
Transfer Characteristics
100
V
GE
, Gate to Emitter Voltage (V)
0
0
1
2
3
V
CE
, Collector to Emitter Voltage (V)
Gate Charge
I
C
= 30A
T
J
= 25°C
V
CE
=120V
V
CE
=300V
V
CE
=480V
4
18
250µs Pulse Test
< 0.5% Duty cycle
Ic, Collector Current (A)
16
14
12
10
8
6
4
2
0
0
75
50
25
T
J
=25°C
T
J
=125°C
T
J
=-55°C
0
0
1
2
3
4
5
6
7
8
9
V
GE
, Gate to Emitter Voltage (V)
10
20
40
60
80
100
120
Gate Charge (nC)
V
CE
, Collector to Emitter Voltage (V)
On state Voltage vs Junction Temperature
4
3.5
3
2.5
2
1.5
1
0.5
0
-50
-25
0
25
50
75
100
T
J
, Junction Temperature (°C)
125
Ic=15A
250µs Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
Ic=30A
Ic=60A
V
CE
, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
8
7
6
5
4
3
2
1
0
6
8
10
12
Ic=15A
Ic=30A
T
J
= 25°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=60A
14
16
V
GE
, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
Collector to Emitter Breakdown
Voltage (Normalized)
1.20
Ic, DC Collector Current (A)
1.10
1.00
0.90
0.80
0.70
-50
-25
0
25
50
75
100
125
T
J
, Junction Temperature (°C)
DC Collector Current vs Case Temperature
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100 125 150
T
C
, Case Temperature (°C)
www.microsemi.com
4-7
APTGF30H60T3G – Rev 2 October, 2012
APTGF30H60T3G
Turn-On Delay Time vs Collector Current
td(on), Turn-On Delay Time (ns)
td(off), Turn-Off Delay Time (ns)
50
125
Turn-Off Delay Time vs Collector Current
40
V
GE
= 15V
100
V
GE
=15V,
T
J
=25°C
V
GE
=15V,
T
J
=125°C
30
Tj = 125°C
V
CE
= 400V
R
G
= 6.8Ω
75
20
50
V
CE
= 400V
R
G
= 6.8Ω
10
0
10
20
30
40
50
60
70
I
CE
, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
50
40
30
20
10
0
0
10
20
30
40
50
60
I
CE
, Collector to Emitter Current (A)
70
V
GE
=15V,
T
J
=125°C
V
CE
= 400V
R
G
= 6.8Ω
25
0
10
20
30
40
50
60
70
I
CE
, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
50
40
tf, Fall Time (ns)
tr, Rise Time (ns)
30
T
J
= 125°C
20
T
J
= 25°C
10
V
CE
= 400V, V
GE
= 15V, R
G
= 6.8Ω
0
0
10
20
30
40
50
60
I
CE
, Collector to Emitter Current (A)
70
E
off
, Turn-off Energy Loss (mJ)
Turn-On Energy Loss vs Collector Current
1
E
on
, Turn-On Energy Loss (mJ)
V
CE
= 400V
R
G
= 6.8Ω
T
J
=125°C,
V
GE
=15V
2
Turn-Off Energy Loss vs Collector Current
V
CE
= 400V
V
GE
= 15V
R
G
= 6.8Ω
T
J
= 125°C
0.75
0.5
0.25
0
0
1.5
1
0.5
0
0
10
20
30
40
50
60
70
I
CE
, Collector to Emitter Current (A)
Reverse Bias Safe Operating Area
70
10
20
30
40
50
60
70
I
CE
, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
1
Switching Energy Losses (mJ)
I
C
, Collector Current (A)
Eoff, 30A
60
50
40
30
20
10
0
0
100
200
300
400
500
600
0.75
Eon, 30A
0.5
0.25
V
CE
= 400V
V
GE
= 15V
T
J
= 125°C
0
0
5
10
15
20
Gate Resistance (Ohms)
25
V
CE
, Collector to Emitter Voltage (V)
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5-7
APTGF30H60T3G – Rev 2 October, 2012
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