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MPLAD15KP8.0CAE3

Description
Trans Voltage Suppressor Diode, 15000W, 8V V(RWM), Bidirectional, 1 Element, Silicon
CategoryDiscrete semiconductor    diode   
File Size291KB,4 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
Download Datasheet Parametric View All

MPLAD15KP8.0CAE3 Overview

Trans Voltage Suppressor Diode, 15000W, 8V V(RWM), Bidirectional, 1 Element, Silicon

MPLAD15KP8.0CAE3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrochip
package instructionR-PSSO-G1
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
Maximum breakdown voltage9.83 V
Minimum breakdown voltage8.89 V
Breakdown voltage nominal value9.36 V
Shell connectionCATHODE
Maximum clamping voltage13.6 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PSSO-G1
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation15000 W
Number of components1
Number of terminals1
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation2.5 W
Certification statusNot Qualified
GuidelineMIL-19500
Maximum repetitive peak reverse voltage8 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT 15,000 W
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 7.0 to 200 V standoff voltages (V
WM
)
- Fast response
LEVELS
M, MA, MX, MXL
DEVICES
MPLAD15KP7.0A thru MPLAD15KP200CA, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Low profile surface mount
Optional up screening available by replacing the M prefix with MA, MX or MXL. These prefixes specify
various screening and conformance inspection options based on MIL-PRF-19500. Refer to
MicroNote
129
for more details on the screening options
Suppresses transients up to 15,000 W @ 10/1000 µs (see Figure 1)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
Class 1,2,3,4,5: MPLAD15KP7.0A to 200CA
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
Class 1,2,3,4: MPLAD15KP7.0A to 200CA
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:
o
Class 2,3: MPLAD15KP7.0A to 200CA
o
Class 4: MPLAD15KP5.0 to 54CA
Pin injection protection per RTCA/DO-160D for Waveform 4 (6.4/69 µs):
o
Level 4: MPLAD15KP7.0A to 200CA
o
Level 5: MPLAD15KP7.0A to 100CA
Pin injection protection per RTCA/DO-160D for Waveform 5A (40/120 µs):
o
Level 4: MPLAD15KP7.0A to 28CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 °C: 15,000 watts at 10/1000 μs (also see Figures 1 and 2) with
impulse repetition rate (duty factor) of 0.05% or less
t
clamping
(0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -55 °C to +150 °C
Thermal resistance: 0.2 °C/W junction to case or 50 °C/W junction to ambient when mounted on FR4 PC
board with recommended mounting pad (see page 2)
Steady-State Power dissipation: 50 watts at TC = 100 °C with good heat sink, or 2.5 watts at TA = 25 °C
if mounted on FR4 PC board as described for thermal resistance
Forward Surge Voltage: 3.5 V maximum @ 500 Amps 8.3 ms half-sine wave (unidirectional devices only)
Solder temperatures: 260 °C for 10 s (maximum)
RF01004 Rev C, November 2010
High Reliability Product Group
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