The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 23 August 2006.
INCH-POUND
MIL-PRF-19500/127T
23 May 2006
SUPERSEDING
MIL-PRF-19500/127R
19 August 2005
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N4370A-1 THROUGH 1N4372A-1 AND 1N746A-1 THROUGH 1N759A-1, 1N4370AUR-1 THROUGH
1N4372AUR-1 AND 1N746AUR-1 THROUGH 1N759AUR-1, 1N4370C-1 THROUGH 1N4372C-1 AND 1N746C-1
THROUGH 1N759C-1, 1N4370CUR-1 THROUGH 1N4372CUR-1 AND 1N746CUR-1 THROUGH 1N759CUR-1,
1N4370D-1 THROUGH 1N4372D-1 AND 1N746D-1 THROUGH 1N759D-1, 1N4370DUR-1 THROUGH
1N4372DUR-1 AND 1N746DUR-1 THROUGH 1N759DUR-1,
JAN, JANTX, JANTXV, JANHC, AND JANKC
JANS level (see 6.4).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall
consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator
diodes with voltage tolerances of 5, 2, and 1 percent. Three levels of product assurance are provided for each
encapsulated device type as specified in MIL-PRF-19500. Two level of product assurance is provided for each
unencapsulated device .
1.2 Physical dimensions. See 3.4 and figure 1 (similar to DO-35), figure 2 (similar to DO-213AA), and figures 3
and 4 for die.
1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.9) herein and
as follows:
a.
b.
c.
P
TL
= 500 mW, (DO-35) at T
L
= +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat
sink at L = .375 inch (9.53 mm). Derate I
Z
to 0.0 mA dc at +175°C.
P
TEC
= 500 mW, (DO-213AA) at T
EC
= +125°C, derate to 0 at +175°C. -65°C
≤
T
J
≤
+175°C; -65°C
≤
T
STG
≤
+175°C.
P
T(PCB)
= 400 mW, T
A
= 55°C.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil
Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at
http://assist.daps.dla.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/127T
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in maximum and primary test
ratings (see 3.9) herein and as follows:
a.
b.
c.
d.
2.4 V dc
≤
V
Z
≤
12 v dc.
1N4370A-1 through 1N4372A-1 and 1N746A-1 through 1N759A-1 are
±5
percent voltage tolerance.
1N4370C-1 through 1N4372C-1 and 1N746C-1 through 1N759C-1 are
±2
percent voltage tolerance.
1N4370D-1 through 1N4372D-1 and 1N746D-1 through 1N759D-1 are
±1
percent voltage tolerance.
Thermal resistance:
R
θ
JL
= 250°C/W maximum at L = .375 inch (9.53 mm) (D0-35).
R
θ
JEC
= 100°C/W maximum. Junction to end-caps (D0-213AA).
R
θ
JA
= 300°C/W junction to ambient including PCB see note.
NOTE: See figures 5, 6, and 7 for derating curves. T
A
= +75°C for both axial and MELF (US) on printed circuit board
(PCB), PCB = FR4 .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, still air, pads (US) = .067 inch (1.70 mm) x .105
inch (2.67 mm); pads (axial) = .092 inch (2.34 mm) diameter, strip = .030 inch (0.762 mm) x 1 inch (25.4 mm) long,
axial lead length L
≤
.187 inch (≤ 4.75 mm); R
θJA
with a defined thermal resistance condition included is measured at
IZ = as defined in the electrical characteristics table herein.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://assist.daps.dla.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/127T
Symbol
Inches
BD
BL
LD
LL
LU
Min
.055
.120
.018
1.000
Max
.090
.200
.023
1.500
.050
Dimensions
Millimeters
Min
1.40
3.05
0.46
25.40
Max
2.29
5.08
0.58
38.10
1.27
Notes
3
4
5
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension BD shall be measured at the largest diameter.
4. The BL dimension shall include the entire body including slugs.
5. Dimension LU shall include the sections of the lead over which the diameter is uncontrolled. This
uncontrolled area is defined as the zone between the edge of the diode body and extending .050
inch (1.27 mm) onto the leads.
6. In accordance with ASME Y14.5M, diameters are equivalent to
φX
symbology.
FIGURE 1. Physical dimensions for types 1N4370A-1 through 1N4372A-1, 1N4370C-1 through 1N4372C-1,
1N4370D-1 through 1N4372D-1, 1N746A-1 through 1N759A-1, 1N746C-1 through 1N759C-1, and
1N746D-1 through 1N759D-1 (DO-35).
3
MIL-PRF-19500/127T
Symbol
Inches
BL
BD
ECT
S
Min
.130
.063
.016
.001 min
Max
.146
.067
.022
Dimensions
Millimeters
Min
3.30
1.60
0.41
0.03 min
Max
3.71
1.71
0.56
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
φX
symbology.
FIGURE 2. Physical dimensions for types 1N4370AUR-1 through 1N4372AUR-1, 1N4370CUR-1 through
1N4372CUR-1, 1N4370DUR-1 through 1N4372DUR-1, 1N746AUR-1 through 1N759AUR-1,
1N746CUR-1 through 1N759CUR-1, and 1N746DUR-1 through 1N759DUR-1 (DO-213AA).
4
MIL-PRF-19500/127T
(A – version)
Ltr
Inches
A
B
Min
.021
.013
Max
.025
.017
Dimensions
Millimeters
Min
Max
0.53
0.63
0.33
0.43
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The physical characteristics of the die thickness are .010
±.002
(0.25
mm
±0.051
mm). Metallization is top = (anode)-AL, back: (cathode)-AU.
AL thickness = 25,000 Å minimum, AU thickness = 4,000 Å minimum.
4. Circuit layout data: For zener operation, cathode must be operated
positive with respect to anode.
FIGURE 3. Physical dimensions (JANHCA and JANKCA die dimensions).
5
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