SEMICONDUCTOR
RoHS
12PT Series
RoHS
Sensitive and Standard SCRs, 12A
Main Features
2
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
12
600 to 1000
0.2 to 15
Unit
A
V
mA
1
1
2
3
2
3
2
TO-251
(I-PAK)
(12PTxxF)
TO-252
(D-PAK)
(12PTxxG)
2
DESCRIPTION
Available either in sensitive or standard gate
triggering levels, the 12A SCR series is suitable
to fit all modes of control found in applications
such as overvoltage crowbar protection, motor
control circuits in power tools and kitchen aids,
inrush current limiting circuits, capacitive
discharge ignition and voltage regulation circuits.
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space.
A1 A2
G
1
2
1
3
2
3
TO-220AB
(Non-lnsulated)
(12PTxxA)
TO-220AB
(lnsulated)
(12PTxxAI)
A2
2
(A2)
TO-263
(D
2
PAK)
(12PTxxH)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25
°
C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-251/TO-252/TO-220AB/TO-263
TO-220AB insulated
I
T(AV)
TO-251/TO-252/TO-220AB/TO-263
TO-220AB insulated
I
TSM
I
2
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
F = 60 Hz
T
p
= 20 µs
T
j
=125ºC
F =50 Hz
F =60 Hz
t
p
= 10 ms
T
j
= 125ºC
T
j
= 125ºC
T
c
=105°C
T
c
=90°C
T
c
=105°C
T
c
=90°C
t = 20 ms
t = 16.7 ms
VALUE
UNIT
A
12
8
140
145
98
50
4
1
- 40 to + 150
A
A
A
2
s
A/µs
A
W
ºC
- 40 to + 125
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Page 1 of 7
SEMICONDUCTOR
RoHS
12PT Series
RoHS
(T
J
= 25
ºC, unless otherwise specified
)
12PTxxxx
TEST CONDITIONS
T
-
2
15
1.3
0.2
15
30
40
1.6
0.85
30
5
2
30
60
200
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Min.
Max.
Max.
T
j
= 125°C
Min.
Max.
Max.
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min.
Max.
Max.
Max.
Max.
0.5
5
Unit
STANDARD ELECTRICAL SPECIFICATIONS
SYMBOL
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
to
R
d
I
DRM
I
RRM
V
D
= 12 V, R
L
= 33
V
D
= V
DRM
, R
L
= 3.3K
I
T
= 500 mA, gate open
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
, gate open
I
TM
= 24A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
SENSITIVE ELECTRICAL CHARACTERISTICS
SYMBOL
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
to
R
d
I
DRM
I
RRM
V
D
= 12 V, R
L
= 140
TEST CONDITIONS
(T
j
= 25
ºC, unless otherwise specified
)
12PTxxxx-S
Max.
Max.
200
0.8
0.1
8
5
6
5
1.6
0.85
30
5
2
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
V
D
= V
DRM
, R
L
= 3.3K , R
GK
=220 Ω
I
RG
= 10
µ
A
I
T
= 50 mA
,
R
GK
= 1 KΩ
I
G
= 1 mA
,
R
GK
= 1 KΩ
V
D
= 67% V
DRM
, R
GK
= 220Ω
I
TM
= 24A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM,
R
GK
= 220
Ω
T
j
= 125°C
Min.
Min.
Max.
Max.
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min.
Max.
Max.
Max.
Max.
THERMAL RESISTANCE
SYMBOL
Parameter
IPAK/DPAK/TO-220AB/TO-263
Junction to case (DC)
TO-220AB insulated
S = 0.5 cm
2
R
th(j-a)
Junction to ambient (DC)
S = 1 cm
2
D-PAK
D²PAK
I-PAK
TO-220AB, TO-220AB insulated
4.6
70
45
100
60
°C/W
VALUE
1.3
°C/W
UNIT
R
th(j-c)
S=Copper surface under tab
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Page 2 of 7
SEMICONDUCTOR
RoHS
12PT Series
RoHS
PRODUCT SELECTOR
VOLTAGE
(
x x
)
PART NUMBER
600
V
12PTxxA-S/12PTxxAl-S
12PTxxA-T/12PTxxAl-T
12PTxxA/12PTxxAl
12PTxxF-S
12PTxxF-T
12PTxxF
12PTxxG-S
12PTxxG-T
12PTxxG
12PTxxH-S
12PTxxH-T
12PTxxH
V
V
V
V
V
V
V
V
V
V
V
V
800
V
V
V
V
V
V
V
V
V
V
V
V
V
1000
V
V
V
V
V
V
V
V
V
V
V
V
V
200
µ
A
0.5~5
m
A
2~15
m
A
200
µ
A
0.5~5 mA
2~15
m
A
200
µ
A
0.5~5
m
A
2~15
m
A
20
µ
A
0.5~5
m
A
2~15
m
A
TO-220AB
TO-220AB
TO-220AB
I-PAK
I-PAK
I-PAK
D-PAK
D-PAK
D-PAK
D²-PAK
D²-PAK
D²-PAK
SENSITIVITY
PACKAGE
ORDERING INFORMATION
ORDERING TYPE
12PTxxA-y
12PTxxAI-y
12PTxxF-y
12PTxxG-y
12PTxxH-y
Note:
xx = voltage, y = sensitivity
MARKING
12PTxxA-y
12PTxxAI-y
12PTxxF-y
12PTxxG-y
12PTxxH-y
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-251(I-PAK)
TO-252(D-PAK)
TO-263(D²-PAK)
WEIGHT
2.0g
2.3g
0.40g
0.38g
2.0g
,
BASE Q TY
50
50
80
80
50
DELIVERY MODE
Tube
Tube
Tube
Tube
Tube
ORDERING INFORMATION SCHEME
12 PT 06
Current
12 = 12A, I
T(RMS)
- S
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
F = TO-251 (I-PAK)
G = TO-252 (D-PAK)
H = TO-263 (D²PAK)
I
GT
Sensitivity
S = 70~200 µA
T = 0.5~5 mA
Blank = 2~15 mA
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Page 3 of 7
SEMICONDUCTOR
RoHS
12PT Series
RoHS
Fig.1 Maximum average power dissipation versus
average on-state current
P(W)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
α=180°
Fig.2 Average and DC on-state current versus
case temperature
I
T(AV)
(A)
14
12
10
α=180°
TO-251/TO-252
TO-263/TO-220AB
DC
8
6
360°
4
2
TO-220AB
Insulated
I
T(AV)
(A)
1
2
3
4
5
6
7
α
0
8
9
0
25
50
T case (°C)
75
100
125
Fig.3 Average and DC on-state current versus
ambient temperature (DPAK)
3.0
2.5
DC
Fig.4 Relative variation of thermal impedance
junction to case versus pulse duration
K=[Zth(j-c)/Rth(j-c)]
1.0
I
T
(AV)(A)
Device mounted on FR4 with
Recommended pad layout
2.0
1.5
α=180°
D²PAK
0.5
1.0
0.5
0.0
0
DPAK
0.2
T amb (°C)
25
50
75
100
125
0.1
1E+3
t p (s)
1E+2
1E+1
1E+0
Fig.5 Relative variation of thermal impedance
Junction to ambient versus pulse duration
(DANK)
K=[Zth(j-a)/Rth(j-a)]
1.00
Device mounted on FR4 with
Recommended pad layout
DPAK
Fig.6 Relative variation of gate trigger and
holding current versus junction
temperature for I
GT
=200
µ
A
2.0
1.8
1.6
1.4
1.2
I
GT
,I
H
,I
L
[Tj] / I
GT
,I
H
,I
L
[Tj=25
°
C]
I
GT
D²PAK
0.10
TO-220AB/IPAK
1.0
0.8
0.6
0.4
l
H
& I
L
R
GK
=1K
0.01
1E-2
t p (s)
1E-1
1E+0
1E+1
1E+2
5E+2
0.2
0.0
-40
T j (°C)
-20
0
20
40
60
80
100
120
140
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Page 4 of 7
SEMICONDUCTOR
RoHS
12PT Series
RoHS
Fig.7 Relative variation of gate trigger and
holding current versus junction
temperature
Fig.8 Relative variation of holding current
versus gate-cathode resistance
(typical values)
I
H
[R
GK
] / I
H
[R
GK
=1KΩ]
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
I
GT
,I
H
,I
L
[Tj] / I
GT
,I
H
,I
L
[Tj=25
°
C]
5mA & 15mA Series
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
200µA Series
T
j
=25
°
C
I
GT
l
H
& I
L
T j (°C)
-20
0
20
40
60
80
100
120 140
R
GK
(KΩ)
1E-1
1E+0
1E+1
Fig.9 Relative variation of dV/dt immunity
versus gate-cathode resistance
(Typical values)
10.0
Fig.10 Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values) for I
GT
=200µA
4.0
3.5
3.0
2.5
dV/dt[R
GK
] / dV/dt[R
GK
=220Ω]
T
j
=125
°
C
V
D
=0.67 X V
DRM
dV/dt[C
GK
] / dV/dt[R
GK
=220Ω]
V
D
=0.67 X V
DRM
T
j
=125
°
C
R
GK
=220Ω
1.0
2.0
1.5
1.0
0.5
R
GK
(KΩ)
C
GK
(nF)
0.1
0
200
400
0.0
800
1000
1200
600
0
25
50
75
100
125
150
Fig.11 Surge peak on-state current versus
number of cycles
I
STM
(A)
Fig.12 Non-repetitive surge peak on-state current
and corresponding values of l²t versus
sinusoidal pulse width
I
TSM
(A),I²t(A²s)
2000
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
t
p
=10ms
One cycle
Non repetitive
T
j
initial=25
°
C
1000
I
TSM
Tj inital=25
°
C
dI/dt Iimitation
100
I²t
Repetitive
Tc=105
°
C
Number of cycles
10
100
1000
10
0.01
0.10
t p (ms)
1.00
10.00
1
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Page 5 of 7
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