SEMICONDUCTOR
RoHS
12T Series
RoHS
TRIACs, 12A
Snubberless, Logic Level and Standard
FEATURES
Medium current triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic
for insulated TO-220AB package
High commutation (4Q) or very high
commutation (3Q) capability
12T series are
UL
certified (File ref: E320098)
Packages are RoHS compliant
1
A2
A1
A2
G
2
3
TO-220AB
(non-Insulated)
(12TxxA)
TO-220AB
(lnsulated)
(12TxxAI)
APPLICATIONS
ON/OFF or phase angle function in applications
such as static relays, light dimmers and appliance
motors speed controllers.
The snubberless versions (with suffix W) are
especially recommended for use on inductive loads,
because of their high commutation performances.
The 12T series provides an insulated tab (rated at
2500V
RMS
).
A1 A2
G
A2
TO-263
(D
2
PAK)
(12TxxH)
MAIN FEATURES
SYMBOL
I
T(RMS)
V
DRM
/V
RRM
I
GT(Q1)
VALUE
12
600 to 1000
5 to 50
UNIT
A
V
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current
(full
sine wave)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-263/TO-220AB
TO-220AB insulated
F =50 Hz
F =60 Hz
I t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
2
VALUE
UNIT
A
T
c
= 105ºC
T
c
= 90ºC
t = 20 ms
t = 16.7 ms
12
120
126
72
I
TSM
A
A
2
s
A/µs
A
W
ºC
t p = 10 ms
F =100 Hz
T
p
=20 µs
T
j
=125ºC
T
j
=125ºC
T
j
=125ºC
50
4
1
- 40
to
+ 150
- 40
to
+ 125
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Page 1 of 6
SEMICONDUCTOR
RoHS
12T Series
RoHS
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
12Txxxx
SYMBOL
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
dV/dt
(2)
V
D
= V
DRM
, R
L
= 3.3KΩ
T
j
= 125°C
I
T
= 500 mA
I
-
III
I
G
= 1.2 I
GT
II
V
D
= 67% V
DRM
, gate open ,T
j
= 125°C
(dV/dt)c = 0.1 V/µs
(dI/dt)c
(2)
(dV/dt)c = 10 V/µs
Without snubber
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
MIN.
MAX.
25
MIN.
20
3.5
1
-
TEST CONDITIONS
QUADRANT
TW
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
I
-
II
-
III
I
-
II
-
III
MAX.
MIN.
MAX.
10
15
15
20
35
40
6.5
2.9
-
1.3
0.2
40
50
60
500
-
-
6.5
60
70
mA
80
1000
-
-
12
A/ms
V/µs
V
V
mA
MAX.
05
SW
10
CW
35
BW
50
mA
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
Standard (4 quadrants)
12Txxxx
SYMBOL
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
IV
ALL
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
, gate open, T
j
= 125°C
(dI/dt)c = 5.3 A/ms, T
j
= 125°C
I
-
III
-
IV
II
dV/d
t(2)
(dV/dt)c
(2)
MIN.
MIN.
ALL
MAX.
MAX.
25
40
80
200
5
C
MAX.
25
50
1.3
0.2
50
50
80
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
UNIT
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
STATIC CHARACTERISTICS
SYMBOL
V
TM(2)
V
t0
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 17 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
D
=
V
DRM
V
R
=
V
RRM
TEST CONDITIONS
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
MAX.
T
j
= 125°C
1
mA
MAX.
MAX.
MAX.
VALUE
1.55
0.85
35
5
UNIT
V
V
mΩ
µA
Note
1:
Minimum l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
For both polarities of A2 referenced to A1.
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Page 2 of 6
SEMICONDUCTOR
RoHS
12T Series
RoHS
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
R
th(j-a)
Junction to case
(AC)
Junction to ambient
S = 1 cm
2
VALUE
TO-220AB, TO-263
TO-220AB Insulated
TO-263
TO-220AB Insulated, TO-220AB
1.4
2.3
45
60
UNIT
°C/W
°C/W
S
=
Copper surface under tab.
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
12TxxA-B/ 12TxxAl-B
12TxxA-BW/12TxxAl-BW
12TxxA-C/12TxxAl-C
12TxxA-CW/12TxxAl-CW
12TxxA-SW/12TxxAl-SW
12TxxA-TW/12TxxAI-TW
12TxxH -SW
12TxxH -CW
12TxxH -BW
AI:
Insulated TO-220AB package
V
V
V
V
V
V
V
V
V
800
V
V
V
V
V
V
V
V
V
V
1000
V
V
V
V
V
V
V
V
V
V
50
mA
50
mA
25
mA
35
mA
10
mA
5
mA
10
mA
35
mA
50
mA
Standard
Snubberless
Standard
Snubberless
Logic level
Logic level
Logic level
Snubberless
Snubberless
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
D
2
PAK
D
2
PAK
D
2
PAK
SENSITIVITY
TYPE
PACKAGE
ORDERING INFORMATION
ORDERING TYPE
12TxxA-yy
12TxxAI-yy
12TxxH-yy
MARKING
12TxxA-yy
12TxxAI-yy
12TxxH-yy
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-236(D
2
PAK)
WEIGHT
2.0g
2.3g
2.0g
BASE Q,TY
50
50
50
DELIVERY MODE
Tube
Tube
Tube
Note:
xx
=
voltage, yy
=
sensitivity
ORDERING INFORMATION SCHEME
12 T 06
Current
12 = 12A
A - BW
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
H = TO-263 (D
2
PAK)
IGT Sensitivity
B
= 50mA
Standard
C
= 25mA
Standard
SW
= 10mA
Logic Level
BW
= 50mA
Snubberless
CW
= 35mA
Snubberless
TW
= 5mA
Logic Level
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Page 3 of 6
SEMICONDUCTOR
RoHS
12T Series
RoHS
Fig.1 Maximum power dissipation versus RMS on-state
current
(full
cycle)
P
(W)
16
14
12
10
8
6
4
2
0
0
1
2
3
4
Fig.2 RMS on-state current versus case temperature
(full
cycle)
I
T(RMS)
(A)
I
T(RMS)
(A)
5
6
7
8
9
10
11
12
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
TO-220AB
( insulated )
TO-220AB
TO-263
T
C
(°C)
0
25
50
75
100
125
Fig.3 RMS on-state current versus ambient
temperature (printed circuit board FR4,
copper thickness: 35µm)(full cycle)
I
T(RMS)
(A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
1E-1
D
2
PAK
(S=1cm
2
)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
K=[Z
th
/R
th
]
1E+0
Z
th(j-c)
Z
th(j-a)
T
c
(°C)
50
75
100
125
1E-2
1E-3
tp(s)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Fig.5 On-state characteristics (maximum values).
I
100
Fig.6 Surge peak on-state current versus number
of cycles.
I
TSM
(A)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
1
(A)
T
j
max.
V
to
= 0.85
V
R
d
= 35
mΩ
t=20ms
T
j
=T
j
max
Non repetitive
T
j
initial=25°C
Repetitive
T
c
=90°C
One cycle
10
T
j
=25°C
V
TM
(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Number of cycles
10
100
1000
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Page 4 of 6
SEMICONDUCTOR
RoHS
12T Series
RoHS
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l
2
t.
l
TSM
(A), l
2
t(A
2
s)
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
2.5
T
j
initial=25°C
1000
dI/dt limitation:
50A/µs
2.0
I
GT
I
TSM
1.5
I
H
&
I
L
100
I
2
t
1.0
0.5
t
p
(ms)
10
0.01
0.10
1.00
10.00
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Fig.10 Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values).
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.8
2.4
2.0
C
SW
B
CW/BW
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
TW
1.6
1.2
0.8
0.4
(dV/dt)c (V/µs)
1.0
10.0
100.0
1.0
0.5
0.0
0.1
1.0
0.0
0.1
(dV/dt)c (V/µs)
10.0
100.0
Fig.11 Relative variation of critical rate of decrease
of main current versus junction temperature
Fig.12 D
2
PAK thermal resistance junction to
ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35µm)
(dI/dt)c
[T
j
]
(dl/dt)c [
T
j
specified ]
6
5
4
3
2
1
80
70
60
50
40
30
20
10
R
th(j-a)
(°C/W)
D
2
PAK
S(cm
2
)
0
4
8
12
16
20
24
28
32
36
40
T
j
(°C)
0
0
25
50
75
100
125
0
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Page 5 of 6
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