MSR2N3700UB
Screened Levels:
MSR
Rad Hard Low Power NPN Silicon Transistor
Screened per MIL-PRF-19500 & ESCC 22900
QPL RANGE and RAD LEVEL
Radiation Level
TID
ELDRS
MSR2N3700UB
100 Krad
100 Krad
DESCRIPTION
This RHA level low power NPN switching transistor, 2N3700 device in a UB and UBC package,
is ideal to drive many high-reliability applications. This device is constructed and screened to a
JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on
all die lots. Fully compliant to
GSFC EEE-INST-002
reliability, screening and radiation
hardness assurance requirements for space flight projects.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 2N3700
TID level screened per MIL-PRF-19500
Also available with ELDRS testing to 0.01 Rad(s)/ sec
MKCR/MHCR chip die available
RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose rate
UB Package
Also available in:
TO-18 (TO-206AA)
(leaded)
MSR2N3700
APPLICATIONS / BENEFITS
Rad-Hard power supplies
Rad-Hard motor controls
General purpose switching
Instrumentation Amps
EPS Satellite switching power applications
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
Power Dissipation:
@ T
A
= +25 ºC
(1)
Symbol
T
J
and T
STG
R
ӨJSP
R
ӨJA
P
D
V
CBO
V
EBO
V
CEO
I
C
T
SP
Value
-65 to +200
90
325
0.5
140
7.0
80
1.0
260
Unit
ºC
ºC/W
ºC/W
W
V
V
V
A
o
Collector-Base Voltage, Emitter Open
Emitter-Base Voltage, Collector Open
Collector-Emitter Voltage, Base Open
Collector Current, dc
Solder Temperature @ 10 s
Notes:
1. Derate linearly 6.6 mW/°C for T
A
+25 °C.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
C
T4-LDS-0340-1, Rev. 1 (04/15/14)
©2014 Microsemi Corporation
Page 1 of 9
MECHANICAL and PACKAGING
CASE: Ceramic
TERMINALS: Gold plating over nickel under plate.
MARKING: Part number, date code, manufacturer’s ID, and serial number
TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities.
WEIGHT: < 0.04 Grams
See
Package Dimensions
on last page.
MSR2N3700UB
PART NOMENCLATURE
MSR
Reliability Level
MSR* = 100K Rads (Si)
2N3700
UB
Surface Mount package
JEDEC type number
*The MSR designator is our internal part nomenclature assigned to this family of parts, in lieu of pending JANSR
submissions through DLA (Defense Logistic Agency).
Symbol
I
B
I
C
I
E
T
A
T
C
V
CB
V
CBO
V
CE
V
CEO
V
EB
SYMBOLS & DEFINITIONS
Definition
Base current: The value of the dc current into the base terminal.
Collector current: The value of the dc current into the collector terminal.
Emitter current: The value of the dc current into the emitter terminal.
Ambient temperature
Case temperature
Collector-base voltage: The dc voltage between the collector and the base.
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-emitter voltage: The dc voltage between the collector and the emitter.
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
Emitter-base voltage: The dc voltage between the emitter and the base
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal
open-circuited.
V
EBO
T4-LDS-0340-1, Rev. 1 (04/15/14)
©2014 Microsemi Corporation
Page 2 of 9
MSR2N3700UB
ELECTRICAL CHARACTERISTICS
@ T
A
= 25 ºC unless otherwise noted.
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 30 mA
Collector-Base Cutoff Current
V
CB
= 140 V
Emitter-Base Cutoff Current
V
EB
= 7 V
Collector-Emitter Cutoff Current
V
CE
= 90 V
Emitter-Base Cutoff Current
V
EB
= 5.0 V
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
I
C
= 150 mA, V
CE
= 10 V
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
I
C
= 1.0 A, V
CE
= 10 V
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
Symbol
V
(BR)CEO
I
CBO
I
EBO1
I
CES
I
EBO2
Min.
80
Max.
Unit
V
10
10
10
10
µA
µA
A
A
h
FE
100
50
90
50
15
300
300
300
V
CE(sat)
V
BE(sat)
0.2
0.5
1.1
V
V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 mA, V
CE
= 5.0 V, f = 1.0 kHz
Magnitude of Small-Signal Short-Circuit Forward Current
Transfer Ratio
I
C
= 50 mA, V
CE
= 10 V, f = 20 MHz
Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
Symbol
h
fe
|h
fe
|
C
obo
C
ibo
Min.
80
5.0
Max.
400
20
12
60
Unit
pF
pF
(1) Pulse Test: Pulse Width = 300 µs, duty cycle
≤
2.0%
T4-LDS-0340-1, Rev. 1 (04/15/14)
©2014 Microsemi Corporation
Page 3 of 9
MSR2N3700UB
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
SAFE OPERATION AREA
(See SOA graph below and
MIL-STD-750 method 3053)
DC Tests
T
C
= 25 °C, 1 cycle, t = 10 ms
Test 1
2N3700UB
Test 2
2N3700UB
Test 3
2N3700UB
V
CE
= 10 V
I
C
= 180 mA
V
CE
= 40 V
I
C
= 45 mA
V
CE
= 80 V
I
C
= 22.5 mA
I
C
– COLLECTOR CURRENT - mA
V
CE
– COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area
T4-LDS-0340-1, Rev. 1 (04/15/14)
©2014 Microsemi Corporation
Page 4 of 9
MSR2N3700UB
GRAPHS
Maximum DC Operation Rating (W)
T
SP
(
o
C) Solder Pad
FIGURE 1
Temperature-Power Derating (R
ӨJSP
)
T4-LDS-0340-1, Rev. 1 (04/15/14)
©2014 Microsemi Corporation
Page 5 of 9
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