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MT5C2561EC-35L883C

Description
Standard SRAM, 256KX1, 35ns, CMOS, CQCC28, CERAMIC, LCC-28
Categorystorage    storage   
File Size158KB,12 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

MT5C2561EC-35L883C Overview

Standard SRAM, 256KX1, 35ns, CMOS, CQCC28, CERAMIC, LCC-28

MT5C2561EC-35L883C Parametric

Parameter NameAttribute value
MakerMicross
Parts packaging codeQLCC
package instructionQCCN,
Contacts28
Reach Compliance Codecompli
ECCN code3A001.A.2.C
Maximum access time35 ns
JESD-30 codeR-CQCC-N28
length13.97 mm
memory density262144 bi
Memory IC TypeSTANDARD SRAM
memory width1
Number of functions1
Number of terminals28
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize256KX1
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height3.048 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
width8.89 mm
SRAM
MT5C2561
256K x 1 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-88725
• SMD 5962-88544
• MIL-STD-883
PIN ASSIGNMENT
(Top View)
24-Pin DIP (C)
(300 MIL)
A6
A7
A8
A9
A10
A11
A14
A15
A0
Q
WE\
Vss
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
Vcc
A5
A4
A3
A2
A1
A17
A16
A13
A12
D
CE\
FEATURES
High Speed: 35, 45, 55, and 70
Battery Backup: 2V data retention
Low power standby
High-performance, low-power, CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
28-Pin LCC (EC)
• Timing
35ns access
45ns access
55ns access
70ns access
• Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
A8
A7
A6
Vcc
A5
3 2 1 28 27
OPTIONS
MARKING
-35
-45
-55*
-70*
NC 4
A9 5
A10 6
A11 7
A14 8
A15 9
A0 10
Q 11
NC 12
26
25
24
23
22
21
20
19
18
13 14 15 16 17
A12
D
CE\
Vss
WE\
NC
A4
A3
A2
A1
A17
A16
A13
NC
C
EC
No. 106
No. 204
• Operating Temperature Ranges
Industrial (-40
o
C to +85
o
C)
IT
o
o
Military (-55 C to +125 C)
XT
• 2V data retention/low power
L
GENERAL DESCRIPTION
The Micross Components SRAM family employs
high-speed, low-power CMOS and are fabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Micross Components offers chip enable (CE\) on all organiza-
tions. This enhancement can place the outputs in High-Z for
additional flexibility in system design. The x1 configuration
features separate data input and output.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is ac-
complished when WE\ remains HIGH and CE\ goes LOW. The
device offers a reduced power standby mode when disabled.
This allows system designs to achieve low standby power
requirements.
These devices operate from a single +5V power supply
and all inputs and outputs are fully TTL compatible.
Micross Components reserves the right to change products or specifications without notice.
*Electrical characteristics identical to those provided for the 45ns
access devices.
For more products and information
please visit our web site at
www.micross.com
MT5C2561
Rev. 2.8 01/10
1
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