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MJE172

Description
TRANSISTOR,BJT,PNP,80V V(BR)CEO,3A I(C),TO-126
CategoryDiscrete semiconductor    The transistor   
File Size152KB,3 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
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TRANSISTOR,BJT,PNP,80V V(BR)CEO,3A I(C),TO-126

MJE172 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNational Semiconductor(TI )
Reach Compliance Codecompli
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)50
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)1.5 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)50 MHz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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