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M29W640GB60NA3F

Description
Flash, 4MX16, 60ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
Categorystorage    storage   
File Size2MB,90 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M29W640GB60NA3F Overview

Flash, 4MX16, 60ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

M29W640GB60NA3F Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeTSOP
package instruction12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
Contacts48
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time60 ns
Other featuresBOTTOM BOOT BLOCK
Spare memory width8
startup blockBOTTOM
JESD-30 codeR-PDSO-G48
length18.4 mm
memory density67108864 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialPARALLEL
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
typeNOR TYPE
width12 mm
M29W640GH M29W640GL
M29W640GT M29W640GB
64-Mbit (8 Mbit x8 or 4 Mbit x16, uniform block or boot block)
3 V supply flash memory
Feature
Supply voltage
– V
CC
= 2.7 to 3.6 V for program/erase/read
– V
PP
=12 V for fast program (optional)
Asynchronous random/page read
– Page width: 4 words
– Page access: 25 ns
– Random access: 60 ns, 70 ns, 90 ns
Fast program commands
– 2-word/4-byte program (without V
PP
=12 V)
– 4-word/8-byte program (with V
PP
=12 V)
– 16-word/32-byte write buffer
Programming time
– 10
μs
per byte/word typical
– Chip program time: 10 s (4-word program)
Memory organization
– M29W640GH/L:
128 main blocks, 64 Kbytes each
– M29W640GT/B
Eight 8-Kbyte boot blocks (top or bottom)
127 main blocks, 64 Kbytes each
Program/erase controller
– Embedded byte/word program algorithms
Program/erase suspend and resume
– Read from any block during program
suspend
– Read and program another block during
erase suspend
Table 1.
Device summary
Root part number
M29W640GH: uniform, last block protected by V
PP
/WP
M29W640GL: uniform, first block protected by V
PP
/WP
M29W640GT: top boot blocks
M29W640GB: bottom boot blocks
Device code
227Eh + 220Ch + 2201h
227Eh + 220Ch + 2200h
227Eh + 2210h + 2201h
227Eh + 2210h + 2200h
TSOP48 (NA)
12 x 20 mm
FBGA
TSOP56 (NB)
14 x 20 mm(1)
BGA
FBGA
TFBGA48 (ZA)
6 x 8 mm
FBGA64 (ZS)
11 x 13 mm
TBGA64 (ZF)
10 x 13 mm(1)
1. Packages only available upon request.
RoHS compliant packages
128-word extended memory block
Low power consumption:standby and
automatic standby
Unlock Bypass Program command
– Faster production/batch programming
Common flash interface: 64-bit security code
V
PP
/WP pin for fast program and write protect
Temporary block unprotection mode
100,000 program/erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Device code (see
Table 1)
Automotive Certified Parts Available
October 2009
Rev 11
1/90
www.numonyx.com
1

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