EEWORLDEEWORLDEEWORLD

Part Number

Search

M58WR064HU7AZA6U

Description
Flash, 4MX16, 70ns, PBGA80, 10 X 12 MM, 1 MM PITCH, ROHS COMPLIANT, LBGA-80
Categorystorage    storage   
File Size2MB,117 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance  
Download Datasheet Parametric View All

M58WR064HU7AZA6U Overview

Flash, 4MX16, 70ns, PBGA80, 10 X 12 MM, 1 MM PITCH, ROHS COMPLIANT, LBGA-80

M58WR064HU7AZA6U Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionLBGA, BGA80,8X10,40
Contacts80
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time70 ns
Other featuresTOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B80
length12 mm
memory density67108864 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,127
Number of terminals80
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA80,8X10,40
Package shapeRECTANGULAR
Package formGRID ARRAY
page size4 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Department size4K,32K
Maximum standby current0.00001 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width10 mm
M58WR064HU
M58WR064HL
64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst)
1.8V supply Flash memories
Feature summary
Supply voltage
–V
DD
= 1.7 V to 2 V for Program, Erase and
Read
– V
DDQ
= 1.7 V to 2 V for I/O Buffers
– V
PP
= 12 V for fast Program (9 V tolerant)
Multiplexed address/data
Synchronous / asynchronous read
– Synchronous Burst Read mode: 66 MHz
– Random Access: 70 ns
Synchronous burst read suspend
Programming time
– 8
μs
by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
Memory blocks
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
Dual operations
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
Block locking
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
Security
– 128 bit user programmable OTP cells
– 64 bit unique device number
Common Flash Interface (CFI)
100,000 program/erase cycles per block
LBGA80 (ZA)
10 x 8 ball array
FBGA
VFBGA44
7.7 x 9mm (ZB)
7.5 × 5mm (ZA)
LBGA
Electronic signature
– Manufacturer Code: 20h
– Top Device Code,
M58WR064HU: 88C0h
– Bottom Device Code,
M58WR064HL: 88C1h
Package
RoHS compliant
Automotive device grade 6 in LBGA80
package:
– Temperature: -40 to 85 °C
– Automotive grade certified
November 2008
Rev 6
1/117
www.numonyx.com
1

Recommended Resources

Popular Articles

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 407  755  450  2168  2159  9  16  10  44  28 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号