TRANSISTOR,BJT,NPN,30V V(BR)CEO,400MA I(C),CHIP / DIE
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | , |
| Reach Compliance Code | unknow |
| Maximum collector current (IC) | 0.4 A |
| Configuration | Single |
| Minimum DC current gain (hFE) | 25 |
| Maximum operating temperature | 200 °C |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 5 W |
| surface mount | YES |
| 2C3866AHV | |
|---|---|
| Description | TRANSISTOR,BJT,NPN,30V V(BR)CEO,400MA I(C),CHIP / DIE |
| Maker | NXP |
| Reach Compliance Code | unknow |
| Maximum collector current (IC) | 0.4 A |
| Configuration | Single |
| Minimum DC current gain (hFE) | 25 |
| Maximum operating temperature | 200 °C |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 5 W |
| surface mount | YES |