DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5240T
40 V, 2 A
PNP low V
CEsat
(BISS) transistor
Product data sheet
Supersedes data of 2001 Oct 31
2004 Jan 15
NXP Semiconductors
Product data sheet
40 V, 2 A
PNP low V
CEsat
(BISS) transistor
FEATURES
•
Low collector-emitter saturation voltage
•
High current capability
•
Improved device reliability due to reduced heat
generation
•
Replacement for SOT89/SOT223 standard packaged
transistor.
APPLICATIONS
•
Supply line switching circuits
•
Battery management applications
•
DC/DC converter applications
•
Strobe flash units
•
Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
PNP low V
CEsat
transistor in a SOT23 plastic package.
NPN complement: PBSS4240T.
MARKING
TYPE NUMBER
PBSS5240T
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
∗
= W: Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS5240T
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
ZF*
Top view
handbook, halfpage
PBSS5240T
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX.
−40
−2
−3
<220
UNIT
V
A
A
mΩ
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
2004 Jan 15
2
NXP Semiconductors
Product data sheet
40 V, 2 A
PNP low V
CEsat
(BISS) transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
T
amb
≤
25
°C;
note 2
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS5240T
MAX.
−40
−40
−5
−2
−3
−300
300
480
+150
150
+150
V
V
V
A
A
UNIT
mA
mW
mW
°C
°C
°C
2. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
in free air; note 2
Notes
1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm
2
.
VALUE
417
260
UNIT
K/W
K/W
2004 Jan 15
3
NXP Semiconductors
Product data sheet
40 V, 2 A
PNP low V
CEsat
(BISS) transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
BEO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
=
−30
V; I
E
= 0
V
EB
=
−4
V; I
C
= 0
V
CE
=
−2
V
I
C
=
−100
mA
I
C
=
−500
mA
I
C
=
−1
A
I
C
=
−2
A
V
CEsat
collector-emitter saturation voltage I
C
=
−100
mA; I
B
=
−1
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−750
mA; I
B
=
−15
mA
I
C
=
−1
A; I
B
=
−50
mA
I
C
=
−2
A; I
B
=
−200
mA
R
CEsat
V
BEsat
V
BE(on)
f
T
C
c
Note
1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
=
−500
mA; I
B
=
−50
mA;
note 1
I
C
=
−2
A; I
B
=
−200
mA
V
CE
=
−2
V; I
C
=
−100
mA
I
C
=
−100
mA; V
CE
=
−10
V;
f = 100 MHz
V
CB
=
−10
V; I
E
= I
e
= 0;
f = 1 MHz
300
260
210
100
−
−
−
−
−
−
−
−
100
−
450
350
290
180
−55
−70
−140
−140
−240
160
−
−
200
23
−
−
V
CB
=
−30
V; I
E
= 0; T
j
= 150
°C −
MIN.
−
−
−
PBSS5240T
TYP.
MAX.
−100
−50
−100
−
−
−
−
−100
−110
−225
−225
−350
<220
−1.1
−0.75
−
28
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mΩ
V
V
MHz
pF
2004 Jan 15
4
NXP Semiconductors
Product data sheet
40 V, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5240T
handbook, halfpage
1000
MHC064
handbook, halfpage
hFE
800
(1)
−1200
VBE
(mV)
−1000
−800
MHC067
(1)
600
−600
(2)
(2)
400
−400
(3)
(3)
200
−200
0
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
0
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
V
CE
=
−2V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
=
−2V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
handbook, halfpage
−1200
MHC066
VBEsat
(V)
−10
3
handbook, halfpage
VCEsat
(mV)
MHC068
−1000
−10
2
−800
(1)
(1)
(2)
(3)
−600
(2)
−10
−400
(3)
−200
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
−1
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
I
C
/I
B
= 20.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.4
Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 15
5
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