74HC2G125-Q100;
74HCT2G125-Q100
Dual buffer/line driver; 3-state
Rev. 1 — 3 April 2013
Product data sheet
1. General description
The 74HC2G125-Q100; 74HC2G125-Q100 are dual buffer/line drivers with 3-state
outputs controlled by the output enable inputs (nOE). Inputs include clamp diodes which
enable the use of current limiting resistors to interface inputs to voltages in excess of V
CC
.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from
40 C
to +85
C
and from
40 C
to +125
C
Input levels:
For 74HC2G125-Q100: CMOS level
For 74HCT2G125-Q100: TTL level
Wide supply voltage range from 2.0 V to 6.0 V
Symmetrical output impedance
High noise immunity
Low power consumption
Balanced propagation delays
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0
)
Multiple package options
NXP Semiconductors
74HC2G125-Q100; 74HCT2G125-Q100
Dual buffer/line driver; 3-state
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC2G125DP-Q100
74HCT2G125DP-Q100
74HC2G125DC-Q100
74HCT2G125DC-Q100
40 C
to +125
C
40 C
to +125
C
Name
Description
Version
TSSOP8 plastic thin shrink small outline package; 8 leads; SOT505-2
body width 3 mm; lead length 0.5 mm
VSSOP8 plastic very thin shrink small outline package; 8
leads; body width 2.3 mm
SOT765-1
Type number
4. Marking
Table 2.
Marking
Marking code
[1]
H25
T25
H25
T25
Type number
74HC2G125DP-Q100
74HCT2G125DP-Q100
74HC2G125DC-Q100
74HCT2G125DC-Q100
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
2
1A
1Y
6
2
6
1
1OE
1
EN1
1
5
2A
2Y
3
5
7
2
EN2
mce186
A
3
OE
Y
7
2OE
mce185
mna120
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram (one driver)
74HC_HCT2G125_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 3 April 2013
2 of 15
NXP Semiconductors
74HC2G125-Q100; 74HCT2G125-Q100
Dual buffer/line driver; 3-state
6. Pinning information
6.1 Pinning
74HC2G125-Q100
74HCT2G125-Q100
1OE
1A
2Y
GND
1
2
3
4
aaa-006894
8
7
6
5
V
CC
2OE
1Y
2A
Fig 4.
Pin configuration SOT505-2 (TSSOP8) and SOT765-1 (VSSOP8)
6.2 Pin description
Table 3.
Symbol
1OE, 2OE
1A, 2A
GND
1Y, 2Y
V
CC
Pin description
Pin
1, 7
2, 5
4
6, 3
8
Description
output enable input (active LOW)
data input
ground (0 V)
data output
supply voltage
7. Functional description
Table 4.
Control
nOE
L
L
H
[1]
Function table
[1]
Input
nA
L
H
X
Output
nY
L
H
Z
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
All information provided in this document is subject to legal disclaimers.
Conditions
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
V
O
=
0.5
V to (V
CC
+ 0.5 V)
[1]
[1]
[1]
Min
0.5
-
-
-
-
Max
+7.0
20
20
35
70
Unit
V
mA
mA
mA
mA
74HC_HCT2G125_Q100
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 3 April 2013
3 of 15
NXP Semiconductors
74HC2G125-Q100; 74HCT2G125-Q100
Dual buffer/line driver; 3-state
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
I
GND
T
stg
P
tot
[1]
[2]
Parameter
ground current
storage temperature
total power dissipation
Conditions
Min
70
65
Max
-
+150
300
Unit
mA
C
mW
T
amb
=
40 C
to +125
C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP8 package: above 55
C
the value of P
tot
derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110
C
the value of P
tot
derates linearly with 8 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
74HC2G125-Q100
Min
2.0
0
0
40
-
-
-
Typ
5.0
-
-
+25
-
1.67
-
Max
6.0
V
CC
V
CC
+125
625
139
83
74HCT2G125-Q100
Min
4.5
0
0
40
-
-
-
Typ
5.0
-
-
+25
-
1.67
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
C
ns/V
ns/V
ns/V
Unit
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
C.
Symbol
Parameter
Conditions
T
amb
=
40 C
to +85
C
T
amb
=
40 C
to +125
C
Unit
Min
74HC2G125-Q100
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
6.0
mA; V
CC
= 4.5 V
I
O
=
7.8
mA; V
CC
= 6.0 V
1.9
4.4
5.9
3.84
5.34
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
V
V
V
V
V
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Typ
Max
Min
Max
74HC_HCT2G125_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 3 April 2013
4 of 15
NXP Semiconductors
74HC2G125-Q100; 74HCT2G125-Q100
Dual buffer/line driver; 3-state
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
C.
Symbol
V
OL
Parameter
Conditions
T
amb
=
40 C
to +85
C
T
amb
=
40 C
to +125
C
Unit
Min
LOW-level output V
I
= V
IH
or V
IL
voltage
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 6.0 mA; V
CC
= 4.5 V
I
O
= 7.8 mA; V
CC
= 6.0 V
I
I
I
OZ
I
CC
C
I
C
O
input leakage
current
V
I
= V
CC
or GND; V
CC
= 6.0 V
-
-
-
-
-
-
-
-
-
-
Typ
0
0
0
0.15
0.16
-
-
-
1.0
1.5
Max
0.1
0.1
0.1
0.33
0.33
1.0
5.0
10
-
-
Min
-
-
-
-
-
-
-
-
-
-
Max
0.1
0.1
0.1
0.4
0.4
1.0
10
20
-
-
V
V
V
V
V
A
A
A
pF
pF
OFF-state output V
I
= V
IH
or V
IL
;
current
V
O
= V
CC
or GND; V
CC
= 6.0 V
supply current
input capacitance
output
capacitance
HIGH-level input
voltage
LOW-level input
voltage
HIGH-level
output voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
=
20 A
I
O
=
6.0
mA
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
74HCT2G125-Q100
V
IH
V
IL
V
OH
2.0
-
1.6
1.2
-
0.8
2.0
-
-
0.8
V
V
4.4
3.84
-
-
-
-
-
-
-
-
4.5
4.32
0
0.16
-
-
-
-
1.0
1.5
-
-
0.1
0.33
1.0
5.0
10
375
-
-
4.4
3.7
-
-
-
-
-
-
-
-
-
-
0.1
0.4
1.0
10
20
410
-
-
V
V
V
V
A
V
OL
LOW-level output V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
voltage
I
O
= 20
A
I
O
= 6.0 mA
input leakage
current
V
I
= V
CC
or GND; V
CC
= 5.5 V
I
I
I
OZ
I
CC
I
CC
C
I
C
O
OFF-state output V
I
= V
IH
or V
IL
; V
O
=
current
V
CC
or GND; V
CC
= 5.5 V
supply current
additional supply
current
input capacitance
output
capacitance
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
per input; V
CC
= 4.5 V to 5.5 V;
V
I
= V
CC
2.1 V; I
O
= 0 A
A
A
pF
pF
74HC_HCT2G125_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 3 April 2013
5 of 15
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