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MCM63P818ZP100R

Description
IC,SYNC SRAM,256KX18,CMOS,BGA,119PIN,PLASTIC
Categorystorage    storage   
File Size452KB,21 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

MCM63P818ZP100R Overview

IC,SYNC SRAM,256KX18,CMOS,BGA,119PIN,PLASTIC

MCM63P818ZP100R Parametric

Parameter NameAttribute value
MakerNXP
Parts packaging codeBGA
package instructionBGA,
Contacts119
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time5 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B119
length22 mm
memory density4718592 bi
Memory IC TypeCACHE SRAM
memory width18
Number of functions1
Number of terminals119
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height2.4 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
width14 mm
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCM63P736/D
128K x 36 and 256K x 18 Bit
Pipelined BurstRAM
Synchronous Fast Static RAM
MCM63P736
MCM63P818
Freescale Semiconductor, Inc...
The MCM63P736 and MCM63P818 are 4M–bit synchronous fast static RAMs
designed to provide a burstable, high performance, secondary cache for the
PowerPC™ and other high performance microprocessors. The MCM63P736 is
organized as 128K words of 36 bits each, and the MCM63P818 is organized as
256K words of 18 bits each. These devices integrate input registers, an output
R,
register, a 2–bit address counter, and high speed SRAM onto a single monolithic
TO
circuit for reduced parts count in cache data RAM applications. Synchronous
UC
design allows precise cycle control with the use of an external clock (K).
ND
Addresses (SA), data inputs (DQx), and all control signals except output
CO
I
enable (G), sleep mode (ZZ), and linear burst order (LBO) are clock (K) controlled
M
through positive–edge–triggered noninverting registers.
SE
burst
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent
E
addresses can be generated internally by the MCM63P736
AL
MCM63P818
and
(burst sequence operates in linear or interleaved mode dependent upon the state
SC
input pin.
of LBO) and controlled by the burst address advance
E
E
(ADV) rising edge of the
Write cycles are internally self–timed and are initiated by the
FR
write pulse generation
clock (K) input. This feature eliminates complex off–chip
BY
and provides increased timing flexibility for incoming signals.
Synchronous byte write (SBx), synchronous global write (SGW), and synchro-
ED
IV
nous write enable (SW) are provided to allow writes to either individual bytes or
to all bytes. The bytes are designated as “a”, “b”, etc. SBa controls DQa, SBb
CH
controls DQb, etc. Individual bytes are written if the selected byte writes SBx are
AR
asserted with SW. All bytes are written if either SGW is asserted or if all SBx and
SW are asserted.
For read cycles, pipelined SRAMs output data is temporarily stored by an
edge–triggered output register and then released to the output buffers at the next
rising edge of clock (K).
The MCM63P736 and MCM63P818 operate from a 3.3 V core power supply
and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs
are JEDEC standard JESD8–5 compatible.
MCM63P736/MCM63P818–133 = 4 ns Access/7.5 ns Cycle (133 MHz)
MCM63P736/MCM63P818–100 = 5 ns Access/10 ns Cycle (100 MHz)
MCM63P736/MCM63P818–66 = 7 ns Access/15 ns Cycle (66 MHz)
3.3 V + 10%, – 5% Core Power Supply, 2.5 V or 3.3 V I/O Supply
ADSP, ADSC, and ADV Burst Control Pins
Selectable Burst Sequencing Order (Linear/Interleaved)
Two–Cycle Deselect Timing
Internally Self–Timed Write Cycle
Byte Write and Global Write Control
Sleep Mode (ZZ)
JEDEC Standard 100–Pin TQFP and 119–Pin PBGA Packages
I
C.
N
TQ PACKAGE
TQFP
CASE 983A–01
ZP PACKAGE
PBGA
CASE 999–02
The PowerPC name is a trademark of IBM Corp., used under license therefrom.
REV 3
3/12/99
©
Motorola, Inc. 1999
MOTOROLA FAST SRAM
For More Information On This Product,
Go to: www.freescale.com
MCM63P736•MCM63P818
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