PZTA06 datasheet, PDF - EEWORLD Datasheet

PZTA06: DescriptionTRANSISTOR 0.5 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size55KB，2 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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TRANSISTOR 0.5 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Power

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.25 V

	PZTA06	PZTA06T/R
Description	TRANSISTOR 0.5 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Power	TRANSISTOR 0.5 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
Maker	NXP	NXP
Reach Compliance Code	unknow	compliant
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	80 V	80 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100
JESD-30 code	R-PDSO-G4	R-PDSO-G4
Number of components	1	1
Number of terminals	4	4
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz
VCEsat-Max	0.25 V	0.25 V

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