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THM94000L-10

Description
4,194,304 WORDS x 9 BIT DYNAMIC RAM MODULE
Categorystorage    storage   
File Size402KB,16 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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THM94000L-10 Overview

4,194,304 WORDS x 9 BIT DYNAMIC RAM MODULE

THM94000L-10 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
Parts packaging codeSIMM
package instruction,
Contacts30
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFAST PAGE
Maximum access time100 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeR-XSMA-T30
JESD-609 codee0
memory density37748736 bi
Memory IC TypeFAST PAGE DRAM MODULE
memory width9
Number of functions1
Number of ports1
Number of terminals30
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX9
Output characteristics3-STATE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
refresh cycle1024
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

THM94000L-10 Related Products

THM94000L-10 THM94000S-80 THM94000S THM94000S-10 THM94000L-80
Description 4,194,304 WORDS x 9 BIT DYNAMIC RAM MODULE 4,194,304 WORDS x 9 BIT DYNAMIC RAM MODULE 4,194,304 WORDS x 9 BIT DYNAMIC RAM MODULE 4,194,304 WORDS x 9 BIT DYNAMIC RAM MODULE 4,194,304 WORDS x 9 BIT DYNAMIC RAM MODULE
Maker Toshiba Semiconductor Toshiba Semiconductor - Toshiba Semiconductor Toshiba Semiconductor
Parts packaging code SIMM SIMM - SIMM SIMM
Contacts 30 30 - 30 30
Reach Compliance Code unknow unknow - unknow unknow
ECCN code EAR99 EAR99 - EAR99 EAR99
access mode FAST PAGE FAST PAGE - FAST PAGE FAST PAGE
Maximum access time 100 ns 80 ns - 100 ns 80 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH - RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 code R-XSMA-T30 R-XSMA-N30 - R-XSMA-N30 R-XSMA-T30
memory density 37748736 bi 37748736 bi - 37748736 bi 37748736 bi
Memory IC Type FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE - FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE
memory width 9 9 - 9 9
Number of functions 1 1 - 1 1
Number of ports 1 1 - 1 1
Number of terminals 30 30 - 30 30
word count 4194304 words 4194304 words - 4194304 words 4194304 words
character code 4000000 4000000 - 4000000 4000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C - 70 °C 70 °C
organize 4MX9 4MX9 - 4MX9 4MX9
Output characteristics 3-STATE 3-STATE - 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY - MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified
refresh cycle 1024 1024 - 1024 1024
Maximum supply voltage (Vsup) 5.5 V 5.5 V - 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V - 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V - 5 V 5 V
surface mount NO NO - NO NO
technology MOS MOS - MOS MOS
Temperature level COMMERCIAL COMMERCIAL - COMMERCIAL COMMERCIAL
Terminal form THROUGH-HOLE NO LEAD - NO LEAD THROUGH-HOLE
Terminal location SINGLE SINGLE - SINGLE SINGLE
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