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2SB1202T

Description
TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-252
CategoryDiscrete semiconductor    The transistor   
File Size129KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SB1202T Overview

TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-252

2SB1202T Parametric

Parameter NameAttribute value
MakerON Semiconductor
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)15 W
surface mountYES
Nominal transition frequency (fT)150 MHz

2SB1202T Related Products

2SB1202T 2SB1202U 2SD1802S 2SD1802U
Description TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-252 TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-252 TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252 TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252
Reach Compliance Code compli compli compli compli
Maximum collector current (IC) 3 A 3 A 3 A 3 A
Configuration Single Single Single Single
Minimum DC current gain (hFE) 200 280 140 280
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP NPN NPN
Maximum power dissipation(Abs) 15 W 15 W 15 W 15 W
surface mount YES YES YES YES
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz
Base Number Matches - 1 1 1
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