Ordering number:EN1426B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1381/2SC3503
High-Definition CRT Display,
Video Output Applications
Features
Package Dimensions
unit:mm
2009A
[2SA1381/2SC3503]
· High breakdown voltage : V
CEO
≥300V.
· Small reverse transfer capacitance and excellent high
frequency characteristic
: C
re
=1.8 pF (NPN), 2.3pF (PNP), V
CB
=30V.
· Adoption of MBIT process.
JEDEC : TO-126
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Conditions
B : Base
C : Collector
E : Emitter
Ratings
(–)300
(–)300
(–)5
(–)100
(–)200
1.2
Unit
V
V
V
mA
mA
W
W
Tc=25˚C
Tj
Tstg
7
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Base-to-Emitter Breakdown Votage
Symbol
ICBO
IEBO
hFE
fT
Cob
Cre
VCE(sat)
VBE(sat)
VCB=(–)200V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
VCB=(–)30V, f=1MHz
VCB=(–)30V, f=1MHz
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
(–)300
(–)300
(–)5
40*
150
2.6
(3.1)
1.8
(2.3)
(–)0.6
(–)1.0
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
320*
MHz
pF
pF
pF
pF
V
V
V
V
V
Unit
µA
µA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO IE=(–)10µA, IC=0
* : The 2SA1381/2SC3503 are classified by 10mA h
FE
as follows :
40
C
80
60
D
120
100
E
200
160
F
320
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3107KI/D134MW, TS No.1426-1/4
2SA1381/2SC3503
No.1426-2/4
2SA1381/2SC3503
No.1426-3/4
2SA1381/2SC3503
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of July, 1998. Specifications and information herein are subject to
change without notice.
PS No.1426-4/4
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