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2SD1212

Description
TRANSISTOR,BJT,NPN,30V V(BR)CEO,12A I(C),TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size105KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SD1212 Overview

TRANSISTOR,BJT,NPN,30V V(BR)CEO,12A I(C),TO-220AB

2SD1212 Parametric

Parameter NameAttribute value
MakerON Semiconductor
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)12 A
ConfigurationSingle
Minimum DC current gain (hFE)70
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)35 W
surface mountNO
Nominal transition frequency (fT)120 MHz

2SD1212 Related Products

2SD1212 2SB903
Description TRANSISTOR,BJT,NPN,30V V(BR)CEO,12A I(C),TO-220AB TRANSISTOR,BJT,PNP,30V V(BR)CEO,12A I(C),TO-221VAR
Maker ON Semiconductor ON Semiconductor
Reach Compliance Code compli compli
Maximum collector current (IC) 12 A 12 A
Configuration Single Single
Minimum DC current gain (hFE) 70 70
Maximum operating temperature 150 °C 135 °C
Polarity/channel type NPN PNP
Maximum power dissipation(Abs) 35 W 35 W
surface mount NO NO
Nominal transition frequency (fT) 120 MHz 120 MHz
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