NTST20120CT,
NTSJ20120CTG,
NTSB20120CT-1G,
NTSB20120CTG,
NTSB20120CTT4G
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low V
F
= 0.54 V at I
F
= 5 A
Features
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VERY LOW FORWARD
VOLTAGE, LOW LEAKAGE
SCHOTTKY BARRIER
RECTIFIERS 20 AMPERES,
120 VOLTS
PIN CONNECTIONS
1
2, 4
3
4
•
Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
Pb−Free and Halide−Free Packages are Available
4
Typical Applications
•
Switching Power Supplies including Notebook / Netbook Adapters,
•
•
•
•
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
1
2
TO−220AB
CASE 221A
STYLE 6
4
12
3
I2PAK
CASE 418D
STYLE 3
3
Mechanical Characteristics
•
Case: Epoxy, Molded
•
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
1
2
TO−220FP
CASE 221AH
3
D2PAK
CASE 418B
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
©
Semiconductor Components Industries, LLC, 2012
March, 2012
−
Rev. 2
1
Publication Order Number:
NTST20120CT/D
NTST20120CT, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG,
NTSB20120CTT4G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
C
= 130°C)
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 135°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature
Storage Temperature
Voltage Rate of Change (Rated V
R
)
Per device
Per diode
Per device
Per diode
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
Value
120
Unit
V
20
10
40
20
120
−40
to +150
−40
to +150
10,000
A
I
FRM
A
I
FSM
T
J
T
stg
dv/dt
A
°C
°C
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance per Diode
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
NTST20120CTG
NTSB20120CT−1G
2.5
70
NTSB20120CTG
1.43
46.8
NTSJ20120CTG
4.42
105
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Per Leg unless otherwise noted)
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(I
F
= 5 A, T
J
= 25°C)
(I
F
= 10 A, T
J
= 25°C)
(I
F
= 5 A, T
J
= 125°C)
(I
F
= 10 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(V
R
= 90 V, T
J
= 25°C)
(V
R
= 90 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
v
2.0%
I
R
Symbol
v
F
Typ
0.62
0.90
0.54
0.64
12
6
−
17
Max
−
1.10
−
0.72
−
−
700
100
mA
mA
mA
mA
Unit
V
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2
NTST20120CT, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG,
NTSB20120CTT4G
TYPICAL CHARACTERISITICS
I R , INSTANTANEOUS REVERSE CURRENT (mA)
i F , INSTANTANEOUS FORWARD CURRENT (A)
100
T
A
= 150°C
10
T
A
= 125°C
T
A
= 25°C
100
T
A
= 150°C
10
T
A
= 125°C
1.0
0.1
1.0
0.01
T
A
= 25°C
20
30
40
50
60
70
80
90 100 110
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
120
0.1
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
v
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.8
Figure 1. Typical Instantaneous Forward
Characteristics
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
10000
C
J
, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
20
Figure 2. Typical Reverse Current
Characteristics
R
qJC
= 1.3°C/W
dc
15
1000
10
SQUARE WAVE
100
5
10
0.1
0
1
10
V
R
, REVERSE VOLTAGE (V)
100
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
Figure 3. Typical Junction Capacitance
Figure 4. Current Derating per Leg
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
40
35
30
25
20
15
10
5
0
0
20
SQUARE WAVE
dc
R
qJC
= 1.3°C/W
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
30
25
20
15
10
I
PK
/I
AV
= 20
I
PK
/I
AV
= 10
I
PK
/I
AV
= 5
SQUARE
WAVE
dc
5
0
T
J
= 150°C
0
2
4
6
8
10
12
14
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
NTST20120CT, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG,
NTSB20120CTT4G
TYPICAL CHARACTERISITICS
10
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
1
50% Duty Cycle
20%
0.1
10%
5%
2%
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
100
1000
1%
0.01
0.000001
Figure 7. Typical Transient Thermal Response for NTST20120CT and NTSB20120CT−1G
10
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
50% Duty Cycle
1
20%
10%
5%
2%
1%
Single Pulse
0.1
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Pulse Time (sec)
Figure 8. Typical Transient Thermal Response for NTSJ20120CTG
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
1
50% Duty Cycle
20%
0.1
10%
5%
2%
1%
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
100
1000
0.01
0.000001
Figure 9. Typical Transient Thermal Response for NTSB20120CTG
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4
NTST20120CT, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG,
NTSB20120CTT4G
ORDERING INFORMATION
Device
NTST20120CTG
NTST20120CTH
(In Development)
NTSJ20120CTG
NTSB20120CT−1G
NTSB20120CTG
NTSB20120CTT4G
Package
TO−220AB
(Pb−Free)
TO−220AB
(Halide−Free)
TO−220FP
(Halide−Free)
I
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
800 / Tape & Reel
MARKING DIAGRAMS
AY WW
TS20120Cx
AKA
AKA
TS20120CG
AYWW
AYWW
TS20120CG
AKA
AYWW
TS20120CG
AKA
TO−220AB
TO−220FP
A
Y
WW
AKA
x
G
H
I
2
PAK
= Assembly Location
= Year
= Work Week
= Polarity Designator
= G or H
= Pb−Free Package
= Halide−Free Package
D
2
PAK
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5
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