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SZESD7551N2T5G

Description
ESD Protection, Micro−Packaged Diodes AEC-Q101.revD Qualified, 8000-REEL
CategoryDiscrete semiconductor    diode   
File Size239KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance  
Download Datasheet Parametric View All

SZESD7551N2T5G Overview

ESD Protection, Micro−Packaged Diodes AEC-Q101.revD Qualified, 8000-REEL

SZESD7551N2T5G Parametric

Parameter NameAttribute value
Brand NameON Semiconduc
Is it lead-free?Lead free
MakerON Semiconductor
package instructionR-PBCC-N2
Manufacturer packaging code714AB
Reach Compliance Codecompli
Other featuresEXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE
Maximum breakdown voltage7.5 V
Minimum breakdown voltage5 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PBCC-N2
JESD-609 codee4
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation0.25 W
GuidelineAEC-Q101; IEC-61000-4-2, 4-5
Maximum repetitive peak reverse voltage3.3 V
surface mountYES
technologyAVALANCHE
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
ESD Protection Diode
Micro−Packaged Diodes for ESD Protection
ESD7551, SZESD7551
The ESD7551 is designed to protect voltage sensitive components
that require ultra−low capacitance from ESD and transient voltage
events. Excellent clamping capability, low capacitance, low leakage,
and fast response time, make these parts ideal for ESD protection on
designs where board space is at a premium. Because of its low
capacitance, the part is well suited for use in high frequency designs
such as USB 2.0 high speed and antenna line applications.
Features
www.onsemi.com
1
Cathode
2
Anode
Ultra−Low Capacitance (0.35 pF Max)
Low Clamping Voltage
Stand−off Voltage: 3.3 V
Low Leakage
Response Time is < 1 ns
Low Dynamic Resistance < 1
W
Protection for the Following Standards:
IEC 61000−4−2 (Level 4) & ISO 10605
SZESD7551MXWT5G
Wettable Flank Package for Optimal
Automated Optical Inspection (AOI)
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
MARKING
DIAGRAM
X2DFN2
CASE 714AB
EM
E
M
= Specific Device Code
= Date Code
X2DFNW2
CASE 711BG
F
M
= Specific Device Code
= Date Code
FM
RF Signal ESD Protection
RF Switching, PA, and Antenna ESD Protection
Near Field Communications
MAXIMUM RATINGS
Rating
Total Power Dissipation on FR−5 Board
(Note 1) @ T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature
Maximum
(10 Second Duration)
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ISO 10605 150 pF/2 kW
ISO 10605 330 pF/2 kW
ISO 10605 330 pF/330
W
Symbol
°P
D
°
R
qJA
T
J
, T
stg
T
L
ESD
Value
250
400
−55
to +150
260
±25
±25
±30
±30
±20
Unit
mW
°C/W
°C
°C
kV
ORDERING INFORMATION
Device
ESD7551N2T5G
SZESD7551N2T5G
Package
X2DFN2
(Pb−Free)
X2DFN2
(Pb−Free)
Shipping
8000 / Tape &
Reel
8000 / Tape &
Reel
8000 / Tape &
Reel
SZESD7551MXWT5G X2DFNW2
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
©
Semiconductor Components Industries, LLC, 2016
April, 2020
Rev. 3
1
Publication Order Number:
ESD7551/D
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