15ETH06PbF/15ETH06FPPbF
Vishay High Power Products
Hyperfast Rectifier,
15 A FRED Pt
TM
FEATURES
15ETH06PbF
15ETH06FPPbF
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Single die center tap module
Pb-free
Available
RoHS*
COMPLIANT
Base
cathode
2
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL E78996 approved
• Lead (Pb)-free
• Designed and qualified for industrial level
1
Cathode
3
Anode
1
Cathode
3
Anode
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
TO-220AC
TO-220 FULL-PAK
PRODUCT SUMMARY
t
rr
(typical)
I
F(AV)
V
R
22 ns
15 A
600 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
SYMBOL
V
RRM
I
F(AV)
T
C
= 140 °C
T
C
= 80 °C (FULL-PAK)
T
J
= 25 °C
T
J
= 25 °C (FULL-PAK)
TEST CONDITIONS
VALUES
600
15
120
180
30
- 65 to 175
°C
A
UNITS
V
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
I
FSM
I
FM
T
J
, T
Stg
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 µA
I
F
= 15 A
I
F
= 15 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1.8
1.3
0.2
30
20
8.0
MAX.
-
2.2
1.6
50
500
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94002
Revision: 28-May-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
15ETH06PbF/15ETH06FPPbF
Vishay High Power Products
Hyperfast Rectifier,
15 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 15 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
t
rr
I
RRM
Q
rr
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/µs
V
R
= 390 V
I
F
= 15 A
dI
F
/dt = 200 A/µs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
22
28
29
75
3.5
7
57
300
51
20
580
MAX.
30
35
-
-
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
nC
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
per leg
(FULL-PAK) per leg
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth
and greased
TEST CONDITIONS
MIN.
- 65
-
-
-
-
-
-
6.0
(5.0)
Case style TO-220AC
Case style TO-220 FULL-PAK
TYP.
-
1.0
3.0
-
0.5
2.0
0.07
-
MAX.
175
1.3
3.5
70
-
-
-
12
(10)
15ETH06
15ETH06FP
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94002
Revision: 28-May-08
15ETH06PbF/15ETH06FPPbF
Hyperfast Rectifier,
15 A FRED Pt
TM
100
1000
T
J
= 175 °C
Vishay High Power Products
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (µA)
100
T
J
= 150 °C
10
1
0.1
0.01
0.001
0
T
J
= 25 °C
T
J
= 125 °C
T
J
= 100 °C
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
1
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
t
1
t
2
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
0.1
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94002
Revision: 28-May-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
15ETH06PbF/15ETH06FPPbF
Vishay High Power Products
10
Hyperfast Rectifier,
15 A FRED Pt
TM
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
10
.
100
0.0001
t
1
- Rectangular Pulse Duration (s)
Fig. 5 - Maximum Thermal Impedance Z
thJC
Characteristics (FULL-PAK)
180
180
Allowable Case Temperature (°C)
Allowable Case Temperature (°C)
170
160
150
140
130
120
110
0
5
10
15
20
25
Square wave (D = 0.50)
80 % rated V
r
applied
DC
160
140
120
100
80
60
40
20
0
0
4
8
12
16
20
24
See note (1)
Square
wave
(D = 0.50)
80
% rated
V
r
applied
DC
See note (1)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
35
I
F(AV)
- Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Average Power Loss (W)
30
25
RMS limit
20
15
10
5
0
0
5
10
15
20
25
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
I
F(AV)
- Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 8);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94002
Revision: 28-May-08
15ETH06PbF/15ETH06FPPbF
Hyperfast Rectifier,
15 A FRED Pt
TM
100
I
F
= 30 A
I
F
= 15 A
80
800
I
F
= 30 A
I
F
= 15 A
1000
V
R
= 390
V
T
J
= 125 °C
T
J
= 25 °C
Vishay High Power Products
40
Q
rr
(nC)
V
R
= 390
V
T
J
= 125 °C
T
J
= 25 °C
1000
t
rr
(ns)
60
600
400
20
200
0
100
0
100
1000
dI
F
/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
V
R
= 200
V
0.01
Ω
L = 70
µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point
where
a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area
under
curve defined
by
t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 12 - Reverse Recovery Waveform and Definitions
Document Number: 94002
Revision: 28-May-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
Analog electronics
京公网安备 11010802033920号
EEWORLD
