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PN120SSL

Description
Photo Transistor, 800nm, 0.02A I(C), CERAMIC PACKAGE-2
CategoryLED optoelectronic/LED    photoelectric   
File Size172KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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PN120SSL Overview

Photo Transistor, 800nm, 0.02A I(C), CERAMIC PACKAGE-2

PN120SSL Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionCERAMIC PACKAGE-2
Reach Compliance Codeunknow
Coll-Emtr Bkdn Voltage-Mi30 V
ConfigurationSINGLE
Maximum dark power500 nA
Infrared rangeYES
Nominal photocurrent1 mA
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum on-state current0.02 A
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Optoelectronic device typesPHOTO TRANSISTOR
peak wavelength800 nm
Maximum power dissipation0.05 W
shapeROUND
size3 mm
surface mountNO
Phototransistors
PN120S
Silicon NPN Phototransistor
Unit : mm
For optical control systems
4.1±0.3
2.0±0.2
12.5 min.
ø3.0±0.2
High sensitivity
Wide directional sensitivity for easy use
Fast response : t
r
, t
f
= 3
µs
(typ.)
Small size (ø 3) ceramic package
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Storage temperature
Operating ambient temperature
T
opr
T
stg
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Symbol
I
CEO
I
CE(L)1
I
CE(L)2
λ
P
θ
V
CE
= 10V
Dark current
co
Acceptance half angle
Response time
nt
in
Peak sensitivity wavelength
ue
Collector photo current
is
t
r
, t
f*2
,,
a
M
,,
in
te
na
nc
,,
e/
*1
*2
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
D
Collector saturation voltage
V
CE(sat)
Sig.OUT (Output pulse)
Pl
e
50Ω
R
L
*3
I
CE(L)
Classifications
Class
I
CE(L)1
(µA)
I
CE(L) 2
(mA)
QL
3 to 16
5 typ.
RL
10 to 30
6 typ.
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
ø0.3±0.05
ø0.45±0.05
0.9±0.15
M
Di ain
sc te
on na
tin nc
ue e/
d
Features
Ratings
30
5
20
Unit
V
V
2
Can be combined with LN62S to form an optical controller
1
1: Emitter
2: Collector
mA
˚C
50
mW
˚C
–25 to +85
–30 to +100
Conditions
lx
*1
min
3
typ
5
*3
max
500
Unit
nA
µA
nm
µs
V
V
CE
= 10V, L = 2
V
CE
= 10V
V
CE
= 10V, L = 500 lx
*1
*3
mA
800
50
3
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100Ω
I
CE(L)
= 1mA, L = 1000 lx
*1
deg.
0.2
0.5
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
SL
>24
8 typ.
1

PN120SSL Related Products

PN120SSL PN120SQL PN120SRL
Description Photo Transistor, 800nm, 0.02A I(C), CERAMIC PACKAGE-2 Photo Transistor, 800nm, 0.02A I(C), CERAMIC PACKAGE-2 Photo Transistor, 800nm, 0.02A I(C), CERAMIC PACKAGE-2
Maker Panasonic Panasonic Panasonic
package instruction CERAMIC PACKAGE-2 CERAMIC PACKAGE-2 CERAMIC PACKAGE-2
Reach Compliance Code unknow unknown unknown
Configuration SINGLE SINGLE SINGLE
Maximum dark power 500 nA 500 nA 500 nA
Infrared range YES YES YES
Nominal photocurrent 1 mA 1 mA 1 mA
Installation features THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT
Number of functions 1 1 1
Maximum on-state current 0.02 A 0.02 A 0.02 A
Maximum operating temperature 85 °C 85 °C 85 °C
Minimum operating temperature -25 °C -25 °C -25 °C
Optoelectronic device types PHOTO TRANSISTOR PHOTO TRANSISTOR PHOTO TRANSISTOR
peak wavelength 800 nm 800 nm 800 nm
Maximum power dissipation 0.05 W 0.05 W 0.05 W
shape ROUND ROUND ROUND
size 3 mm 3 mm 3 mm
surface mount NO NO NO
Coll-Emtr Bkdn Voltage-Min - 30 V 30 V

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