EEWORLDEEWORLDEEWORLD

Part Number

Search

PU3273P

Description
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 3-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SIP-8
CategoryDiscrete semiconductor    The transistor   
File Size189KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

PU3273P Overview

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 3-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SIP-8

PU3273P Parametric

Parameter NameAttribute value
MakerPanasonic
Parts packaging codeSIP
package instructionSIP-8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)4 A
Collector-emitter maximum voltage100 V
ConfigurationCOMPLEX
Minimum DC current gain (hFE)2000
JESD-30 codeR-PSIP-T8
Number of components3
Number of terminals8
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Power Transistor Arrays
PUA3273
(PU3273)
Silicon PNP triple diffusion planar type darlington
For power amplification
Complementary to PUA3173 (PU3173)
Features
Uni: mm
20.2
±0.3
4.0
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
9.5
±0.2
1.65
±0.2
Solder Dip
5.3
±0.5
4.4
±0.5
High forward current transfer ratio h
FE
High-speed switching
PNP 3 elements
8.0
±0.2
0.8
±0.25
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
stg
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE2
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
/D
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
ce
h
FE1 *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
on
t
f
t
stg
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Free
P
Q
1 000 to 10 000 2 000 to 10 000 1 000 to 5 000
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
0.5
±0.15
0.5
±0.15
1.0
±0.25
2.54
±0.2
Rating
−150
−100
−5
−4
−8
15
Unit
V
V
7
×
2.57 = 17.78
±0.25
C 1.5
±0.5
V
A
A
1: Emitter
2: Base
3: Collector
1 2 3 4 5 6 7 8
4: Base
5: Collector
6: Base
7: Collector
8: Emitter
SIP8-A1 Package
W
2.4
150
°C
°C
−55
to
+150
Conditions
Min
Typ
Max
Unit
V
µA
µA
V
V
tin
ue
I
C
= −10
mA, I
B
=
0
−100
on
V
CB
= −150
V, I
E
=
0
V
CE
= −80
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
−100
−100
−5
isc
mA
V
CE
= −4
V, I
C
= −2
A
V
CE
= −4
V, I
C
= −4
A
1 000
500
10 000
−2.5
−2.5
Ma
int
en
an
I
C
= −4
A, I
B
= −16
mA
I
C
= −4
A, I
B
= −16
mA
I
C
= −4
A
V
CE
= −10
V, I
C
= −
0.5 A, f
=
1 MHz
I
B1
= −16
mA, I
B2
=
16 mA
V
CC
= −50
V
20
MHz
µs
µs
µs
0.32
1.70
1.05
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004
SJK00030AED
1

PU3273P Related Products

PU3273P PU3273Q
Description Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 3-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SIP-8 Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 3-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SIP-8
Maker Panasonic Panasonic
Parts packaging code SIP SIP
package instruction SIP-8 SIP-8
Contacts 8 8
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 4 A 4 A
Collector-emitter maximum voltage 100 V 100 V
Configuration COMPLEX COMPLEX
Minimum DC current gain (hFE) 2000 1000
JESD-30 code R-PSIP-T8 R-PSIP-T8
Number of components 3 3
Number of terminals 8 8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 695  1273  2276  27  2307  14  26  46  1  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号