P6SMB10-AU_R1_100A1 datasheet, PDF

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P6SMB10-AU_R1_100A1: DescriptionTrans Voltage Suppressor Diode, 600W, 8.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN; CategoryDiscrete semiconductor diode; File Size192KB，7 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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P6SMB10-AU_R1_100A1 Overview

Trans Voltage Suppressor Diode, 600W, 8.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN

P6SMB10-AU_R1_100A1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	R-PDSO-C2
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum breakdown voltage	11 V
Minimum breakdown voltage	9 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Guideline	AEC-Q101; TS 16949
Maximum repetitive peak reverse voltage	8.1 V
surface mount	YES
technology	AVALANCHE
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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P6SMB-AU SERIES

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts

BREAK DOWN VOLTAGE

6.8 to 550 Volts

FEATURES

• For surface mounted applications in order to optimize board space.

• Low profile package

• Built-in strain relief

• Glass passivated junction

• Low inductance

• Typical I

less than 1.0µA above 10V

• Plastic package has Underwriters Laboratory

Fammability Classification 94V-O

• High temperature soldering : 260°C /10 seconds at terminals

• Acqire quality system certificate : TS16949

• Manufactured in accordance with AECQ101

• Lead free in comply with EU RoHS 2002/95/EC directives

0.155(3.94)

0.083(2.11)

0.075(1.91)

0.185(4.70)

0.160(4.06)

0.096(2.44)

0.050(1.27)

0.030(0.76)

0.220(5.59)

0.200(5.08)

0.130(3.30)

0.012(0.305)

0.006(0.152)

0.083(2.13)

MECHANICAL DATA

• Case:JEDEC DO-214AA ,Molded plastic over passivated junction

• Terminals: Solder plated,solderable per MIL-STD-750,Method 2026

• Polarity : Color band denotes cathode end

• Standard Packaging:12mm tape (EIA-481)

• Weight: 0.003 ounce, 0.093 gram

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA Suffix for types

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.

For Capacitive load derate current by 20%.

Rating

Peak Pulse Power Dissipation on 10/1000uS waveform (Notes 1,2, Fig.1)

Peak Forward Surge Current 8.3ms single half sine-wave

superimposed on rated load (JEDEC Method) (Notes 2,3)

Peak Pulse Current on 10/1000us waveform(Note 1)Fig.3

Typical Thermal Resistance Junction to Air (Notes 2)

Operating Junction and Storage Temperature Range

Symbol

P P M

F S M

P P M

J A

S T G

Value

600

100

see Table 1

-55 to +150

Units

Watts

Amps

C/W

NOTES:

1. Non-repetitive current pulse, per Fig.3 and derated above T

= 25

C per Fig. 2.

2. Mounted on 5.0mm

(0.13mm thick) land areas.

3. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.

March 14,2012-REV.05

PAGE . 1

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