SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
KTC3535T
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
Adoption of MBIT Processes.
High Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
A
F
G
K
B
DIM
A
B
2
3
C
D
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
D
Ultrasmall-Sized Package permitting applied sets to be
made small and slim.
High Allowable Power Dissipation.
Complementary to KTA1535T
C
L
G
High Speed Switching.
1
E
F
G
H
I
J
K
L
H
J
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DC
Pulse
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
*
T
j
T
stg
RATING
20
20
5
3
5
600
0.9
150
-55
0.8 )
150
UNIT
V
V
V
A
mA
W
J
1. EMITTER
2. BASE
3. COLLECTOR
Marking
Lot No.
Type Name
* Package mounted on a ceramic board (600
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
Turn-On Time
Swiitching
Time
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
ob
t
on
INPUT
TEST CONDITION
V
CB
=12V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=10 A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10 A, I
C
=0
I
C
=1.5A, I
B
=30mA
I
C
=1.5A, I
B
=30mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=500mA
V
CB
=10V, f=1MHz
PW=20µs
DC
<
1%
=
I
B1
I
B2
1kΩ
50Ω
V
R
220µF
470µF
V
CC
=5V
R
L
MIN.
-
-
20
20
5
-
-
200
-
-
-
OUTPUT
Storage Time
t
stg
Fall Time
t
f
V
BE
=-5V
20I
B1
=-20I
B2
=I
C
=1.5A
2001. 6. 28
Revision No : 0
I
TSM
HD
TYP.
-
-
-
-
-
120
0.85
-
180
30
30
MAX.
0.1
0.1
-
-
-
150
1.2
560
-
-
-
MHz
pF
UNIT
A
A
V
V
V
mV
V
-
210
-
nS
-
11
-
1/3
KTC3535T
I
C
- V
CE
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
40
60
I
C
- V
CE
25mA
20mA
mA
40m
A
mA
5
4
3
2
5
4
25mA
20mA
15mA
15mA
10mA
5mA
3
10mA
2
5mA
1
0
1mA
2mA
I
B
=0mA
1
0
1mA
2mA
I
B
=0mA
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
h
FE
- I
C
1k
DC CURRENT GAIN h
FE
700
500
300
Ta=75 C
Ta=25 C
Ta=-25 C
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(mV)
1K
500
300
100
50
30
10
5
3
1
0.01
75
Ta=
C
V
CE
=2V
I
C
/I
B
=20
C C
25 5
a= a=-2
T T
100
0.01
0.03
0.1
0.3
1
3
10
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(mV)
1K
500
300
100
50
30
10
5
3
1
0.01
C
75
Ta=
C
25
5 C
Ta=
a=-2
T
V
BE(sat)
- I
C
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
10
5
3
I
C
/I
B
=50
I
C
/I
B
=50
1
0.5
0.3
Ta=-25 C
Ta=25 C
Ta=75 C
0.03
0.1
0.3
1
3
10
0.1
0.01
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
2001. 6. 28
Revision No : 0
2/3
KTC3535T
I
C
- V
BE
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
CE
=2V
f
T
- I
C
TRANSITION FREQUENCY f
T
(MHz)
1K
500
300
V
CE
=2V
COLLECTOR CURRENT I
C
(A)
Ta=2
5 C
Ta=-25
C
Ta=7
5 C
100
50
30
0.01
0.03
0.1
0.3
1
3
0
0.2
0.4
0.6
0.8
1.0
BASE-EMITTER VOLTAGE V
BE
(V)
COLLECTOR CURRENT I
C
(A)
C
ob
- V
CB
COLLECTOR OUTPUT CAPACITANCE
C
ob
(pF)
100
70
50
30
f=1MHz
SAFE OPERATING AREA
10
5
COLLECTOR CURRENT I
C
(A)
3
1
0.5
0.3
0.1
0.05
0.02
0.2
I
C
MAX
(CONTIN-
UOUS)
I
C
MAX.(PULSED)
10
mS
50
S*
0
µ
S
1m
*
*
10
DC
OP
ER
A
0m
S*
TI
ON
10
1
3
5
10
3 0
COLLECTOR-BASE VOLTAGE V
CB
(V)
* SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
(600mm
2
0.8mm)
1
3
10
20
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Pc - Ta
COLLECTOR POWER DISSIPATION
P
C
(W)
1.0
MOUNTED ON A
0.8
0.6
0.4
0.2
0
CERAMIC BOARD
(600mm
2
0.8mm)
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C)
2001. 6. 28
Revision No : 0
3/3
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