SEMICONDUCTOR
RoHS
16PT Series
RoHS
Stansard SCRs, 16A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
16
600 to 1000
25
Unit
A
1
1
2
3
2
3
2
2
V
mA
TO-251
(I-PAK)
(16PTxxF)
2
TO-252
(D-PAK)
(16PTxxG)
DESCRIPTION
The 16PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
1
2
1
3
2
3
TO-220AB
(Non-lnsulated)
(16PTxxA)
TO-220AB
(lnsulated)
(16PTxxAI)
A2
A1 A2
G
2
(A2)
TO-263
(D
2
PAK)
(16PTxxH)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
SYMBOL
TEST CONDITIONS
TO-251/TO-252
TO-220AB/TO-263
TO-220AB insulated
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
TO-251/TO-252
TO-220AB/TO-263
TO-220AB insulated
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
- 40
to
+ 150
ºC
Operating junction temperature range
- 40
to
+ 125
F = 60 Hz
T
p
= 20 µs
T
p
=20µs
T
j
=125ºC
T
j
=125ºC
F =50 Hz
F =60 Hz
t
p
= 10 ms
T
j
= 125ºC
T
j
= 125ºC
T
j
= 125ºC
T
c
=110°C
16
T
c
=86°C
T
c
=110°C
10
T
c
=86°C
t = 20 ms
t = 16.7 ms
190
200
180
50
4
10
1
600
to 1000
A
A
2
s
A/µs
A
W
W
V
A
A
VALUE
UNIT
I
T(RMS)
I
T(AV)
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
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Page 1 of 6
SEMICONDUCTOR
RoHS
16PT Series
RoHS
(T
J
= 25 ºC unless otherwise specified)
16PTxxxx
Min.
2
15
1.3
0.2
40
60
500
1.6
5
2
0.77
23
V
mA
mA
V/µs
V
µA
mA
V
mΩ
Unit
ELECTRICAL SPECIFICATIONS
SYMBOL
I
GT
V
D
= 12V, R
L
= 33Ω
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
I
DRM
I
RRM
V
to
R
d
V
D
= V
DRM
, R
L
= 3.3K
Ω
R
GK
= 220Ω
I
T
= 500mA, Gate open
I
G
= 1.2
×
I
GT
V
D
= 67% V
DRM
, Gate open
I
T
= 32A, t
P
= 380µs
V
D
=V
DRM
, V
R
=V
RRM
R
GK
= 220Ω
Threshold Voltage
Dynamic Resistance
TEST CONDITIONS
Max.
Max.
T
j
= 125°C
Min.
Max.
Min.
T
j
= 125°C
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
Min.
Max.
Max.
Max.
Max.
Max.
mA
V
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
Junction to case
(DC)
S = 1 cm
2
R
th(j-a)
Junction to ambient
S = 0.5 cm
2
Parameter
IPAK/DPAK/TO-220AB/TO-263
TO-263(D
2
PAK)
TO-252(D-PAK)
TO-220AB
TO-251(I-PAK)
VALUE
1.1
45
70
°C/W
60
100
UNIT
°C/W
S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
16PTxxA/16PTxxAl
16PTxxF
16PTxxG
16PTxxH
V
V
V
V
800
V
V
V
V
V
1000
V
V
V
V
V
25
mA
25
mA
25
mA
25
mA
TO-220AB
I-PAK
D-PAK
D
2
PAK
SENSITIVITY
PACKAGE
ORDERING INFORMATION
ORDERING TYPE
16PTxxA
16PTxxAI
16PTxxF
16PTxxG
16PTxxH
Note:
xx
=
voltage
MARKING
16PTxxA
16PTxxAI
16PTxxF
16PTxxG
16PTxxH
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-251(I-PAK)
TO-252(D-PAK)
TO-263(D
2
PAK)
WEIGHT
2.0g
2.3g
0.40g
0.38g
2.0g
BASE Q,TY
50
50
80
80
50
DELIVERY MODE
Tube
Tube
Tube
Tube
Tube
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Page 2 of 6
SEMICONDUCTOR
RoHS
16PT Series
RoHS
ORDERING INFORMATION SCHEME
16 PT 06
Current
16 = 16A,
I
T(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
F = TO-251 (I-PAK)
G = TO-252 (D-PAK)
H = TO-263 (D
2
PAK)
Fig.1 Maximum average power dissipation
versus average on-state current.
P
(W)
16
14
12
10
8
6
4
2
0
0
2
4
360°
Fig.2 Average and D.C. on-state current
versus case temperature.
l
T(AV)
(A)
18
16
14
12
10
8
6
4
2
TO-220AB
insulated
α=180°
D.C.
TO-251/TO-252
TO-263/TO-220AB
α=180°
I
T(AV)
(A)
6
8
α
T
case
(°C)
0
25
50
75
100
125
10
12
0
Fig.3 Average and D.C. on-state current
versus ambient temperature.
(copper surface under tab: S=1cm
2
)
(D
2
PAK)
l
T(AV)
(A)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
K=[Z
th
/R
th
]
1.00
Z
th
(j-c)
D.C.
α=180°
0.10
Z
th
(j-a)
T
amb
(°C)
0
25
50
75
100
125
0.01
1E-3
1E-2
1E-1
t
P
(s)
1E+0
1E+1
1E+2 5E+2
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Page 3 of 6
SEMICONDUCTOR
RoHS
16PT Series
RoHS
Fig.5 Relative variation of gate trigger
current, holding current and latching
current and latching current versus
junction temperature.
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
2.5
2.0
l
GT
200
180
160
140
120
100
80
60
40
Fig.6 Surge peak on-state current versus
number of cycles.
I
TSM
(A)
t
p
=20ms
1.5
1.0
0.5
I
H
&
I
L
Non repetitive
T
j
initial = 25°C
Repetitive
T
case
= 110 °C
One cycle
T
J
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
20
0
1
10
Number of cycles
100
1000
Fig.7 Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and corresponding
values of l
2
t
2000
T
j
initial = 25°C
Fig.8 On-state characteristics (maximum
values)
200
l
TSM
1000
100
T
j
max.:
V
to
= 0.77V
R
d
= 23mΩ
dl/dt
limitattion
T
j
max
l
2
t
10
T
j
= 25°C
100
10
0.01
t
p
(ms)
0.10
1.00
10.00
1
0.0
0.5
1.0
1.5
V
TM
(V)
2.0
2.5
3.0
3.5
4.0
4.5
Fig.9 Thermal resistance junction to ambient
versus copper surface under tab
(epoxy printed circuit board Fr4,
copper thickness:35 µm)(D
2
PAK)
R
th(j-a)
(°C/W)
80
70
60
50
40
30
20
10
0
0
4
8
12
16
S(cm
2
)
20
24
28
32
36
40
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Page 4 of 6
SEMICONDUCTOR
RoHS
16PT Series
RoHS
Case Style
TO-251
(I-PAK)
5.4(0.212)
5.2(0.204)
6.6(0.26)
6.4(0.52)
1.5(0.059)
1.37(0.054)
2.4(0.095)
2.2(0.086)
0.62(0.024)
0.48(0.019)
4T
16.3(0.641)
15.9(0.626)
1.9(0.075)
1.8(0.071)
6.2(0.244)
6(0.236)
9.4(0.37)
9(0.354)
0.85(0.033)
0.76(0.03)
4.6(0.181)
4.4(0.173)
0.65(0.026)
0.55(0.021)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
6.6(0.259)
6.4(0.251)
5.4(0.212)
5.2(0.204)
2
2.4(0.095)
2.2(0.086)
1.5(0.059)
1.37(0.054)
0.62(0.024)
0.48(0.019)
RoHS
1
2
3
9.35(0.368)
10.1(0.397)
6.2(0.244)
6(0.236)
1.14(0.045)
0.76(0.030)
2.28(0.090)
0.89(0.035)
0.64(0.025)
0.62(0.024)
0.45(0.017)
4.57(0.180)
2
(A2)
(G)3
1(A1)
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Page 5 of 6
Embedded System
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